5SNA 1200E330100
Diode characteristic values
Parameter
Forward voltage
6)
5)
Symbol
V
F
I
rr
Q
rr
t
rr
E
rec
Conditions
I
F
= 1200 A
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
V
CC
= 1800 V,
I
F
= 1200 A,
V
GE
=
±15
V,
R
G
= 1.5
Ω
L
σ
= 100 nH
inductive load
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
T
vj
= 25 °C
T
vj
= 125 °C
min
2.0
2.0
typ
2.3
2.35
1100
1350
715
1280
520
1450
840
1530
max
2.6
2.6
Unit
V
A
µC
ns
mJ
Reverse recovery current
Recovered charge
Reverse recovery time
Reverse recovery energy
5)
6)
Characteristic values according to IEC 60747 – 2
Forward voltage is given at chip level
Thermal properties
Parameter
IGBT thermal resistance
junction to case
7)
Symbol
R
th(j-c)IGBT
R
th(j-c)DIODE
2)
Conditions
min
typ
max
Unit
0.0085 K/W
0.017 K/W
per module,
λ
grease = 1W/m
x
K
0.006
K/W
Diode thermal resistance
junction to case
Thermal resistance case
to heatsink
2)
R
th(c-s)
For detailed mounting instructions refer to ABB Document No. 5SYA2039
Mechanical properties
Parameter
Dimensions
Clearance distance in air
Surface creepage distance
Mass
7)
7)
Symbol
L
x
W
d
a
d
s
m
x
Conditions
according to IEC 60664-1 Term. to base:
and EN 50124-1
Term. to term:
according to IEC 60664-1 Term. to base:
and EN 50124-1
Term. to term:
min
23
19
33
32
typ
max
Unit
mm
mm
mm
H Typical , see outline drawing
190
x
140
x
38
1380
g
Thermal and mechanical properties according to IEC 60747 – 15
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1556-03 May 05
page 3 of 9
ABB [ THE ABB GROUP ]
