AC CHARACTERISTICS WRITE CYCLE (Pre and Post-Radiation)*
(-55°C to +125°C for (C) screening and -40°C to +125°C for (W) screening, V
DD1
= V
DD1
(min), V
DD2
= V
DD2
(min))
SYMBOL
PARAMETER
8CR512-15
MIN
MAX
UNIT
t
AVAV1
t
ETWH
t
AVET
t
AVWL
t
WLWH
t
WHAX
t
EFAX
t
WLQZ2
t
WHQX2
t
ETEF
t
DVWH
t
WHDX
t
WLEF
t
DVEF
t
EFDX
t
AVWH
t
WHWL1
Write cycle time
Device enable to end of write
Address setup time for write (EN- controlled)
Address setup time for write (W - controlled)
Write pulse width
Address hold time for write (W - controlled)
Address hold time for device enable (EN- controlled)
W - controlled three-state time
W - controlled output enable time
Device enable pulse width (EN - controlled)
Data setup time
Data hold time
Device enable controlled write pulse width
Data setup time
Data hold time
Address valid to end of write
Write disable time
17
12
0
0
12
2
0
5
4
12
7
2
12
7
0
12
3
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019.
1. Test with G high.
2. Three-state is defined as 200mV change from steady-state output voltage.
8