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UT8CR512K32-17VPC 参数 Datasheet PDF下载

UT8CR512K32-17VPC图片预览
型号: UT8CR512K32-17VPC
PDF下载: 下载PDF文件 查看货源
内容描述: UT8CR512K32 16兆位的SRAM [UT8CR512K32 16 Megabit SRAM]
分类和应用: 静态存储器
文件页数/大小: 16 页 / 318 K
品牌: AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
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ABSOLUTE MAXIMUM RATINGS
1
(Referenced to V
SS
)
SYMBOL
V
DD1
V
DD2
V
I/O
T
STG
P
D
T
J
Θ
JC
I
I
PARAMETER
DC supply voltage
DC supply voltage
Voltage on any pin
Storage temperature
Maximum power dissipation
Maximum junction temperature
2
Thermal resistance, junction-to-case
3
DC input current
LIMITS
-0.3 to 2.0V
-0.3 to 3.8V
-0.3 to 3.8V
-65 to +150°C
1.2W
+150°C
5°C/W
±
5 mA
Notes:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at
these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability and performance.
2. Maximum junction temperature may be increased to +175°C during burn-in and steady-static life.
3. Test per MIL-STD-883, Method 1012.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD1
V
DD2
T
C
V
IN
PARAMETER
Positive supply voltage
Positive supply voltage
Case temperature range
DC input voltage
LIMITS
1.7 to 1.9V
3.0 to 3.6V
(C) Screening: -55 to +125°C
(W) Screening: -40 to +125°C
0V to V
DD2
4