UT8CR512K32-17VPC 参数 Datasheet PDF下载

DC ELECTRICAL CHARACTERISTICS (Pre and Post-Radiation)*

(-55°C to +125°C for (C) screening and -40°C to 125°C for (W) screening)

SYMBOL

V

IH

V

IL

V

OL1

V

OH1

C

IN1

C

IO1

I

IN

I

OZ

PARAMETER

High-level input voltage

Low-level input voltage

Low-level output voltage

High-level output voltage

Input capacitance

Bidirectional I/O capacitance

Input leakage current

Three-state output leakage

current

Short-circuit output current

I

OL

= 8mA,V

DD2

=V

DD2

(min)

I

OH

= -4mA,V

DD2

=V

DD2

(min)

ƒ

= 1MHz @ 0V

ƒ

= 1MHz @ 0V

V

IN

= V

DD2

and V

SS

V

O

= V

DD2

and V

SS,

V

DD2

= V

DD2

(max)

G = V

DD2

(max)

V

DD2

= V

DD2

(max), V

O

= V

DD2

V

DD2

= V

DD2

(max), V

O

= V

SS

Inputs : V

IL

= V

SS

+ 0.2V

V

IH

= V

DD2

- 0.2V, I

OUT

= 0

V

DD1

= V

DD1

(max), V

DD2

= V

DD2

(max)

Inputs : V

IL

= V

SS

+ 0.2V,

V

IH

= V

DD2

- 0.2V, I

OUT

= 0

V

DD1

= V

DD1

(max), V

DD2

= V

DD2

(max)

Inputs : V

IL

= V

SS

+ 0.2V

V

IH

= V

DD2

- 0.2V, I

OUT

= 0

V

DD1

= V

DD1

(max), V

DD2

= V

DD2

(max)

Inputs : V

IL

= V

SS

+ 0.2V,

V

IH

= V

DD2

- 0.2V, I

OUT

= 0

V

DD1

= V

DD1

(max), V

DD2

= V

DD2

(max)

CMOS inputs , I

OUT

= 0

EN = V

DD2

-0.2

V

DD1

= V

DD1

(max), V

DD2

= V

DD2

(max)

CMOS inputs , I

OUT

= 0

EN = V

DD2

- 0.2

V

DD1

= V

DD1

(max), V

DD2

= V

DD2

(max)

-2

-2

.8*V

DD2

12

12

2

2

CONDITION

MIN

.7*V

DD2

.3*V

DD2

.2*V

DD2

MAX

UNIT

V

V

V

V

pF

pF

µA

µA

I

OS2, 3

-100

+100

mA

I

DD1

(OP

1

)

Supply current operating

@ 1MHz

45

mA

I

DD1

(OP

2

)

Supply current operating

@66MHz

93

mA

I

DD2

(OP

1

)

Supply current operating

@ 1MHz

243

µA

I

DD2

(OP

2

)

Supply current operating

@66MHz

12

mA

I

DD1

(SB)

4

I

DD2

(SB)

4

I

DD1

(SB)

4

I

DD2

(SB)

4

Supply current standby @

0Hz

38

100

38

100

mΑ

µA

mΑ

µA

Supply current standby

A(18:0) @ 66MHz

Notes:

* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019 at 1.0E5 rad(Si).

1. Measured only for initial qualification and after process or design changes that could affect input/output capacitance.

2. Supplied as a design limit but not guaranteed or tested.

3. Not more than one output may be shorted at a time for maximum duration of one second.

4. V

IH

= V

DD2

(max), V

IL

= 0V.

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