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UT8CR512K32-17VPC 参数 Datasheet PDF下载

UT8CR512K32-17VPC图片预览
型号: UT8CR512K32-17VPC
PDF下载: 下载PDF文件 查看货源
内容描述: UT8CR512K32 16兆位的SRAM [UT8CR512K32 16 Megabit SRAM]
分类和应用: 静态存储器
文件页数/大小: 16 页 / 318 K
品牌: AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
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AC CHARACTERISTICS READ CYCLE (Pre and Post-Radiation)*
(-55°C to +125°C for (C) screening and -40°C to +125°C for (W) screening, V
DD1
= V
DD1
(min), V
DD2
= V
DD2
(min))
SYMBOL
PARAMETER
8CR512-155
MIN
MAX
UNIT
t
AVAV1
t
AVQV
t
AXQX2
t
GLQX1,2
t
GLQV
t
GHQZ2
t
ETQX2,3
t
ETQV3
t
EFQZ4
Read cycle time
Read access time
Output hold time
G-controlled output enable time
G-controlled output enable time
G-controlled output three-state time
E-controlled output enable time
E-controlled access time
E-controlled output three-state time
2
17
17
3
0
7
7
5
17
7
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019.
1. Guaranteed, but not tested.
2. Three-state is defined as a 200mV change from steady-state output voltage.
3. The ET (enable true) notation refers to the latter falling edge of EN. SEU immunity does not affect the read parameters.
4. The EF (enable false) notation refers to the latter rising edge of EN. SEU immunity does not affect the read parameters.
6