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EP1S40B1508C6ES 参数 Datasheet PDF下载

EP1S40B1508C6ES图片预览
型号: EP1S40B1508C6ES
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内容描述: Stratix器件系列数据手册 [Stratix Device Family Data Sheet]
分类和应用:
文件页数/大小: 290 页 / 3583 K
品牌: ALTERA [ ALTERA CORPORATION ]
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Stratix Architecture
Figure 2–68. Output Timing Diagram in DDR Mode
CLK
A
From Internal
Registers
B
A1
A2
A3
A4
B1
B2
B3
B4
DDR output
B1
A1
B2
A2
B3
A3
The Stratix IOE operates in bidirectional DDR mode by combining the
DDR input and DDR output configurations. Stratix device I/O pins
transfer data on a DDR bidirectional bus to support DDR SDRAM. The
negative-edge-clocked OE register holds the OE signal inactive until the
falling edge of the clock. This is done to meet DDR SDRAM timing
requirements.
External RAM Interfacing
Stratix devices support DDR SDRAM at up to 200 MHz (400-Mbps data
rate) through dedicated phase-shift circuitry, QDR and QDRII SRAM
interfaces up to 167 MHz, and ZBT SRAM interfaces up to 200 MHz.
Stratix devices also provide preliminary support for reduced latency
DRAM II (RLDRAM II) at rates up to 200 MHz through the dedicated
phase-shift circuitry.
1
In addition to the required signals for external memory
interfacing, Stratix devices offer the optional clock enable signal.
By default the Quartus II software sets the clock enable signal
high, which tells the output register to update with new values.
The output registers hold their own values if the design sets the
clock enable signal low. See
f
To find out more about the DDR SDRAM specification, see the JEDEC
web site (www.jedec.org). For information on memory controller
megafunctions for Stratix devices, see the Altera web site
(www.altera.com). See
AN 342: Interfacing DDR SDRAM with Stratix &
Stratix GX Devices
for more information on DDR SDRAM interface in
Stratix. Also see
AN 349: QDR SRAM Controller Reference Design for
Stratix & Stratix GX Devices
and
AN 329: ZBT SRAM Controller Reference
Design for Stratix & Stratix GX Devices.
Altera Corporation
July 2005
2–115
Stratix Device Handbook, Volume 1