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HY57V283220TP-P 参数 Datasheet PDF下载

HY57V283220TP-P图片预览
型号: HY57V283220TP-P
PDF下载: 下载PDF文件 查看货源
内容描述: 4银行X 1M X 32位同步DRAM [4 Banks x 1M x 32Bit Synchronous DRAM]
分类和应用: 动态存储器
文件页数/大小: 15 页 / 914 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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HY57V283220(L)T(P)/ HY5V22(L)F(P)
4 Banks x 1M x 32Bit Synchronous DRAM
DESCRIPTION
The Hynix HY57V283220(L)T(P) / HY5V22(L)F(P) is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the
memory applications which require wide data I/O and high bandwidth. HY57V283220(L)T(P) / HY5V22(L)F(P) is orga-
nized as 4banks of 1,048,576x32.
HY57V283220(L)T(P) / HY5V22(L)F(P) is offering fully synchronous operation referenced to a positive edge of the
clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally
pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write
cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count
sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate
command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined
design is not restricted by a `2N` rule.)
FEATURES
JEDEC standard 3.3V power supply
All device pins are compatible with LVTTL interface
86TSOP-II, 90Ball FBGA with 0.8mm of pin pitch
All inputs and outputs referenced to positive edge of
system clock
Data mask function by DQM0,1,2 and 3
Internal four banks operation
Burst Read Single Write operation
Programmable CAS Latency ; 2, 3 Clocks
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
ORDERING INFORMATION
Part No.
HY57V283220(L)T(P)-5
HY5V22(L)F(P)-5
HY57V283220(L)T(P)-55
HY5V22(L)F(P)-55
HY57V283220(L)T(P)-6
HY5V22(L)F(P)-6
HY57V283220(L)T(P)-7
HY5V22(L)F(P)-7
HY57V283220(L)T(P)-H
HY5V22(L)F(P)-H
HY57V283220(L)T(P)-8
HY5V22(L)F(P)-8
HY57V283220(L)T(P)-P
HY5V22(L)F(P)-P
HY57V283220(L)T(P)-S
HY5V22(L)F(P)-S
Clock Frequency
200MHz
183MHz
166MHz
143MHz
Organization
Interface
Package
4Banks x 1Mbits x32
133MHz
125MHz
100MHz
100MHz
LVTTL
86TSOP-II
90Ball FBGA
Note)
Hynix supports lead free part for each speed grade with same specification.
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume
any responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.9 / July 2004