64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Configuration Registers
Figure 16:
Read Configuration Register
READ
ADDRESS
ADDRESS
(MAX)
READ
ADDRESS
(MAX)
WRITE
1
READ
ADDRESS
(MAX)
ADDRESS
(MAX)
CE#
NOTE
2
OE#
WE#
LB#/UB#
DATA
XXXXh
XXXXh
CR VALUE
OUT
RCR: 0000h
BCR: 0001h
DON'T CARE
Notes: 1. The WRITE on the third cycle must be CE#-controlled.
2. CE# must be HIGH for 150ns before performing the cycle that reads a configuration regis-
ter.
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
20
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