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MT45W4MW16B 参数 Datasheet PDF下载

MT45W4MW16B图片预览
型号: MT45W4MW16B
PDF下载: 下载PDF文件 查看货源
内容描述: 64Mbit的PSRAM使用以及SRAM, VBGA54足迹 [64Mbit psram use as well as sram,VBGA54 footprint]
分类和应用: 静态存储器
文件页数/大小: 61 页 / 970 K
品牌: MICROTUNE [ MICROTUNE,INC ]
 浏览型号MT45W4MW16B的Datasheet PDF文件第35页浏览型号MT45W4MW16B的Datasheet PDF文件第36页浏览型号MT45W4MW16B的Datasheet PDF文件第37页浏览型号MT45W4MW16B的Datasheet PDF文件第38页浏览型号MT45W4MW16B的Datasheet PDF文件第40页浏览型号MT45W4MW16B的Datasheet PDF文件第41页浏览型号MT45W4MW16B的Datasheet PDF文件第42页浏览型号MT45W4MW16B的Datasheet PDF文件第43页  
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Timing Diagrams
Figure 28:
Asynchronous READ Using ADV#
A[21:0]
V
IH
V
IL
tVPH
VALID ADDRESS
tAA
tAVS
tAVH
V
IH
ADV#
V
IL
tVP
tCVS
tAADV
t
HZ
V
IH
CE#
V
IL
tCO
tBA
t
BHZ
V
IH
LB#/UB#
V
IL
tOE
t
OHZ
V
IH
OE#
V
IL
V
IH
WE#
V
IL
tOLZ
tBLZ
tLZ
DQ[15:0]
V
OH
V
OL
High-Z
VALID OUTPUT
tCEW
t
HZ
WAIT
V
IH
V
IL
High-Z
High-Z
DON’T CARE
UNDEFINED
Table 20:
Asynchronous READ Timing Parameters Using ADV#
-70x
-856
Min
Max
85
85
5
10
70
8
10
1
7.5
70
10
1
85
8
7.5
85
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Symbol
t
-70x
Min
10
8
10
20
8
5
10
10
5
10
10
10
Max
-856
Min
10
8
20
8
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
Symbol
t
Min
Max
70
70
AA
t
AADV
t
AVH
t
AVS
t
BA
t
BHZ
t
BLZ
t
CEW
t
CO
5
10
CVS
t
HZ
t
LZ
t
OE
t
OHZ
t
OLZ
t
VP
t
VPH
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
39
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.