64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Timing Diagrams
Figure 29:
Page Mode READ
tRC
A[21:4]
V
IH
V
IL
V
IH
VALID ADDRESS
A[3:0]
V
IL
V
IH
V
IL
VALID ADDRESS
tAA
VALID
ADDRESS
VALID
ADDRESS
VALID
ADDRESS
tPC
ADV#
tCEM
V
IH
tCO
tHZ
CE#
V
IL
V
IH
V
IL
tOE
tOHZ
tBA
tBHZ
LB#/UB#
V
IH
OE#
V
IL
V
IH
WE#
V
IL
V
OH
tOLZ
tBLZ
tLZ
High-Z
t
CEW
tAPA
tOH
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
DQ[15:0]
V
OL
V
IH
tHZ
High-Z
WAIT
V
IL
High-Z
DON’T CARE
UNDEFINED
Table 21:
Asynchronous READ Timing Parameters – Page Mode Operation
-70x
-856
Min
Max
85
25
85
8
10
8
7.5
70
1
8
7.5
85
Units
ns
ns
ns
ns
ns
µs
ns
ns
Symbol
t
HZ
t
LZ
t
-70x
Min
10
20
5
8
5
20
70
5
25
85
5
Max
8
10
-856
Min
Max
8
20
8
Units
ns
ns
ns
ns
ns
ns
ns
ns
Symbol
t
AA
t
APA
t
Min
Max
70
20
70
8
BA
t
BHZ
t
BLZ
t
CEM
t
CEW
t
CO
10
1
OE
t
OH
t
OHZ
t
OLZ
t
PC
t
RC
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
40
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
MICROTUNE [ MICROTUNE,INC ]
