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MT45W4MW16B 参数 Datasheet PDF下载

MT45W4MW16B图片预览
型号: MT45W4MW16B
PDF下载: 下载PDF文件 查看货源
内容描述: 64Mbit的PSRAM使用以及SRAM, VBGA54足迹 [64Mbit psram use as well as sram,VBGA54 footprint]
分类和应用: 静态存储器
文件页数/大小: 61 页 / 970 K
品牌: MICROTUNE [ MICROTUNE,INC ]
 浏览型号MT45W4MW16B的Datasheet PDF文件第34页浏览型号MT45W4MW16B的Datasheet PDF文件第35页浏览型号MT45W4MW16B的Datasheet PDF文件第36页浏览型号MT45W4MW16B的Datasheet PDF文件第37页浏览型号MT45W4MW16B的Datasheet PDF文件第39页浏览型号MT45W4MW16B的Datasheet PDF文件第40页浏览型号MT45W4MW16B的Datasheet PDF文件第41页浏览型号MT45W4MW16B的Datasheet PDF文件第42页  
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Timing Diagrams
Figure 27:
Asynchronous READ
tRC
V
IH
A[21:0]
V
IL
V
IH
V
IL
VALID ADDRESS
tAA
ADV#
tHZ
CE#
V
IH
V
IL
tCO
tBA
tBHZ
LB#/UB#
V
IH
V
IL
tOE
tOHZ
OE#
V
IH
V
IL
WE#
V
IH
V
IL
tLZ
tBLZ
tOLZ
V
OH
DQ[15:0]
V
OL
V
IH
High-Z
tCEW
VALID OUTPUT
tHZ
High-Z
WAIT
V
IL
High-Z
DON’T CARE
UNDEFINED
Table 19:
Asynchronous READ Timing Parameters
-70x
-856
Min
Max
85
85
8
10
1
7.5
85
Units
ns
ns
ns
ns
ns
ns
Symbol
t
HZ
t
LZ
t
t
-70x
Min
10
20
8
5
70
5
85
Max
8
10
-856
Min
Max
8
20
8
Units
ns
ns
ns
ns
ns
ns
Symbol
t
AA
t
BA
t
Min
Max
70
70
8
BHZ
t
BLZ
t
CEW
t
CO
10
1
7.5
70
OE
OHZ
t
OLZ
t
RC
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
38
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.