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K6X8016T3B-TF70 参数 Datasheet PDF下载

K6X8016T3B-TF70图片预览
型号: K6X8016T3B-TF70
PDF下载: 下载PDF文件 查看货源
内容描述: 512Kx16位低功耗全CMOS静态RAM [512Kx16 bit Low Power Full CMOS Static RAM]
分类和应用:
文件页数/大小: 9 页 / 131 K
品牌: SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
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K6X8016T3B Family
Document Title
512Kx16 bit Low Power Full CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0
0.1
Initial draft
Revised
- Deleted 44-TSOP2-400R package type.
Finalized
- Changed I
CC
1 from 4mA to 3mA
- Changed I
CC
2 from 45mA to 30mA
- Changed I
SB
1
(industrial)
from 30µA to 15µA
- Changed I
SB
1
(Automotive)
from 40µA to 25µA
Draft Date
October 31, 2002
December 11, 2002
Remark
Preliminary
Preliminary
1.0
September 16, 2003
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 1.0
September 2003