K6X8016T3B Family
RECOMMENDED DC OPERATING CONDITIONS
1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
Symbol
Vcc
Vss
V
IH
V
IL
Min
2.7
0
2.2
-0.3
3)
Typ
3.0/3.3
0
-
-
CMOS SRAM
Max
3.6
0
Vcc+0.3
2)
0.6
Unit
V
V
V
V
Note:
1. Industrial Product: T
A
=-40 to 85°C, otherwise specified.
Automotive Product: T
A
=-40 to 125°C, otherwise specified.
2. Overshoot: V
CC
+3.0V in case of pulse width
≤30ns.
3. Undershoot: -3.0V in case of pulse width
≤30ns.
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
1)
(f=1MHz, T
A
=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Operating power supply current
Average operating current
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current(CMOS)
Symbol
I
LI
I
LO
I
CC
I
CC1
I
CC2
V
OL
V
OH
I
SB
I
SB1
V
IN
=Vss to Vcc
CS=V
IH,
OE=V
IH
or WE=V
IL
, V
IO
=Vss to Vcc
I
IO
=0mA, CS=V
IL,
WE=V
IH
, V
IN
=V
IH
or V
IL
Cycle time=1µs, 100% duty, I
IO
=0mA, CS≤0.2V, V
IN
≤0.2V
or
V
IN
≥V
CC
-0.2V
Cycle time=Min, I
IO
=0mA, 100% duty, CS=V
IL
, V
IN
=V
IL
or V
IH
I
OL
= 2.1mA
I
OH
= -1.0mA
CS=V
IH
, Other inputs=V
IH
or V
IL
CS≥Vcc-0.2V, Other inputs=0~Vcc
K6X8016T3B-F
K6X8016T3B-Q
Test Conditions
Min
-1
-1
-
-
-
-
2.4
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
Max
1
1
2
3
30
0.4
-
0.4
15
25
Unit
µA
µA
mA
mA
mA
V
V
mA
µA
4
Revision 1.0
September 2003
SAMSUNG [ SAMSUNG SEMICONDUCTOR ]
