K6X8016T3B Family
CMOS SRAM
512Kx16 bit Low Power Full CMOS Static RAM
FEATURES
GENERAL DESCRIPTION
· Process Technology: Full CMOS
· Organization: 512K x16
The K6X8016T3B families are fabricated by SAMSUNG¢s
advanced full CMOS process technology. The families support
various operating temperature range for user flexibility of sys-
tem design. The families also support low data retention voltage
for battery back-up operation with low data retention current.
· Power Supply Voltage: 2.7~3.6V
· Low Data Retention Voltage: 1.5V(Min)
· Three state outputs
· Package Type: 44-TSOP2-400F
PRODUCT FAMILY
Power Dissipation
Product Family
Operating Temperature
Vcc Range
Speed
PKG Type
Standby
(ISB1, Max)
Operating
(ICC2, Max)
551)/70ns
70ns
K6X8016T3B-F
K6X8016T3B-Q
Industrial(-40~85°C)
15mA
25mA
2.7~3.6V
30mA
44-TSOP2-400F
Automotive(-40~125°C)
1. This parameter is measured with 50pF test load (Vcc=3.0~3.6V).
PIN DESCRIPTION
FUNCTIONAL BLOCK DIAGRAM
A4
A3
A2
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
A8
Clk gen.
Precharge circuit.
3
4
5
6
A1
A0
Vcc
Vss
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A18
A17
A16
A15
A14
7
8
9
Row
Addresses
Memory array
1024 rows
512´ 16 columns
Row
select
10
11
12
13
14
15
16
17
18
19
20
21
22
44-TSOP2
Forward
I/O Circuit
Column select
Data
cont
A9
I/O1~I/O8
A10
A11
A12
A13
Data
cont
I/O9~I/O16
Data
cont
Name
CS
Function
Name
Function
Column Addresses
Chip Select Input
Output Enable Input
Write Enable Input
Address Inputs
Vcc Power
Vss Ground
OE
CS
OE
WE
UB
LB
WE
UB
LB
Upper Byte(I/O9~16)
Lower Byte(I/O1~8)
A0~A18
Control Logic
I/O1~I/O16 Data Inputs/Outputs
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
Revision 1.0
September 2003
2
SAMSUNG [ SAMSUNG ]
