M29F400BT
M29F400BB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)
Single Supply Flash Memory
s
SINGLE 5V±10% SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
ACCESS TIME: 45ns
PROGRAMMING TIME
– 8µs per Byte/Word typical
11 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 8 Main Blocks
1
44
s
s
s
s
PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
TSOP48 (N)
12 x 20mm
SO44 (M)
s
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
Figure 1. Logic Diagram
s
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
TEMPORARY BLOCK UNPROTECTION
MODE
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29F400BT: 00D5h
– Bottom Device Code M29F400BB: 00D6h
A0-A17
W
E
G
RP
VCC
s
18
15
DQ0-DQ14
DQ15A–1
M29F400BT
M29F400BB
BYTE
RB
s
s
s
s
VSS
AI02904
July 2000
1/22
STMICROELECTRONICS [ STMICROELECTRONICS ]
