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M29F400BB90N1T 参数 Datasheet PDF下载

M29F400BB90N1T图片预览
型号: M29F400BB90N1T
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位512KB ×8或256Kb的X16 ,引导块单电源闪存 [4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 22 页 / 201 K
品牌: STMICROELECTRONICS [ ST ]
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M29F400BT, M29F400BB  
SIGNAL DESCRIPTIONS  
See Figure 1, Logic Diagram, and Table 1, Signal  
Names, for a brief overview of the signals connect-  
ed to this device.  
t
, whichever occurs last. See the Ready/Busy  
RHEL  
Output section, Table 17 and Figure 11, Reset/  
Temporary Unprotect AC Characteristics for more  
details.  
Holding RP at V will temporarily unprotect the  
protected Blocks in the memory. Program and  
Erase operations on all blocks will be possible.  
ID  
Address Inputs (A0-A17). The Address Inputs  
select the cells in the memory array to access dur-  
ing Bus Read operations. During Bus Write opera-  
tions they control the commands sent to the  
Command Interface of the internal state machine.  
The transition from V to V must be slower than  
IH  
ID  
t
.
PHPHH  
Ready/Busy Output (RB). The Ready/Busy pin  
is an open-drain output that can be used to identify  
when the memory array can be read. Ready/Busy  
is high-impedance during Read mode, Auto Select  
mode and Erase Suspend mode.  
After a Hardware Reset, Bus Read and Bus Write  
operations cannot begin until Ready/Busy be-  
comes high-impedance. See Table 17 and Figure  
11, Reset/Temporary Unprotect AC Characteris-  
tics.  
Data Inputs/Outputs (DQ0-DQ7). The Data In-  
puts/Outputs output the data stored at the selected  
address during a Bus Read operation. During Bus  
Write operations they represent the commands  
sent to the Command Interface of the internal state  
machine.  
Data Inputs/Outputs (DQ8-DQ14). The Data In-  
puts/Outputs output the data stored at the selected  
address during a Bus Read operation when BYTE  
is High, V . When BYTE is Low, V , these pins  
IH  
IL  
are not used and are high impedance. During Bus  
Write operations the Command Register does not  
use these bits. When reading the Status Register  
these bits should be ignored.  
During Program or Erase operations Ready/Busy  
is Low, V . Ready/Busy will remain Low during  
OL  
Read/Reset commands or Hardware Resets until  
the memory is ready to enter Read mode.  
Data Input/Output or Address Input (DQ15A-1).  
The use of an open-drain output allows the Ready/  
Busy pins from several memories to be connected  
to a single pull-up resistor. A Low will then indicate  
that one, or more, of the memories is busy.  
When BYTE is High, V , this pin behaves as a  
IH  
Data Input/Output pin (as DQ8-DQ14). When  
BYTE is Low, V , this pin behaves as an address  
IL  
pin; DQ15A–1 Low will select the LSB of the Word  
on the other addresses, DQ15A–1 High will select  
the MSB. Throughout the text consider references  
to the Data Input/Output to include this pin when  
BYTE is High and references to the Address In-  
puts to include this pin when BYTE is Low except  
when stated explicitly otherwise.  
Byte/Word Organization Select (BYTE). The Byte/  
Word Organization Select pin is used to switch be-  
tween the 8-bit and 16-bit Bus modes of the mem-  
ory. When Byte/Word Organization Select is Low,  
V , the memory is in 8-bit mode, when it is High,  
IL  
V , the memory is in 16-bit mode.  
IH  
V
Supply Voltage. The V  
Supply Voltage  
CC  
CC  
Chip Enable (E). The Chip Enable, E, activates  
the memory, allowing Bus Read and Bus Write op-  
erations to be performed. When Chip Enable is  
supplies the power for all operations (Read, Pro-  
gram, Erase etc.).  
The Command Interface is disabled when the V  
CC  
High, V , all other pins are ignored.  
IH  
Supply Voltage is less than the Lockout Voltage,  
V . This prevents Bus Write operations from ac-  
LKO  
Output Enable (G). The Output Enable, G, con-  
trols the Bus Read operation of the memory.  
cidentally damaging the data during power up,  
power down and power surges. If the Program/  
Erase Controller is programming or erasing during  
this time then the operation aborts and the memo-  
ry contents being altered will be invalid.  
Write Enable (W). The Write Enable, W, controls  
the Bus Write operation of the memory’s Com-  
mand Interface.  
Reset/Block Temporary Unprotect (RP). The Re-  
set/Block Temporary Unprotect pin can be used to  
apply a Hardware Reset to the memory or to tem-  
porarily unprotect all Blocks that have been pro-  
tected.  
A 0.1µF capacitor should be connected between  
the V  
Supply Voltage pin and the V Ground  
CC  
SS  
pin to decouple the current surges from the power  
supply. The PCB track widths must be sufficient to  
carry the currents required during program and  
A Hardware Reset is achieved by holding Reset/  
erase operations, I  
.
CC4  
Block Temporary Unprotect Low, V , for at least  
IL  
Vss Ground. The V  
Ground is the reference  
SS  
t
. After Reset/Block Temporary Unprotect  
PLPX  
for all voltage measurements.  
goes High, V , the memory will be ready for Bus  
IH  
Read and Bus Write operations after t  
or  
PHEL  
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