tm
TE
CH
T2316405A
Preliminary T2316407A
DC CHARACTERISTICS
(Ta = 0 to 70
°
C
) T2316405A-10 Vcc = 2.6V
±
0.2V, Vss = 0V
T2316407A-50/60/70 Vcc = 3.3V
±
0.3V, Vss = 0V
-50
Parameter
-60
-70
-10
Test Condition
0V
≤
Vin
≤
Vcc+ 0.3V
Other pins = 0V
0V
≤
Vout
≤
Vcc
Dout = disable
High Iout= -2.0mA
Low Iout=2.0mA
RAS
,
CAS
cycling
Symbol Min Ma Min Ma Min Ma Min Ma Unit
x
x
x
x
ILI
ILO
VOH
VOL
Icc1
-5
-5
2.0
-
-
5
5
-
0.8
95
-5
-5
2.0
-
-
5
5
-
0.8
90
-5
-5
2.0
-
-
5
5
-
0.8
80
-5
-5
2.0
-
-
5
5
-
0.8
50
uA
uA
V
V
mA
Input Leakage Current
Output Leakage
Current
Output High Voltage
Output Low Voltage
Operating Current
tRC =min
TTL interface,
DOUT=High-Z
CMOS interface,
RAS , CAS > Vcc-0.2V
RAS =VIL, CAS
cycling, tPC = min
CAS =VIH, RAS
cycling,
t
RC = min
RAS
,
CAS
cycling,
Standby Current
Icc2
-
2
-
2
-
2
-
2
mA RAS , CAS =VIH,
Standby Current
EDO Page Mode
Current
RAS -only refresh
Current
CAS Before RAS
Refresh Current
Icc3
Icc4
Icc5
Icc6
-
-
-
-
0.5
95
95
95
-
-
-
-
0.5
90
90
90
-
-
-
-
0.5
80
80
80
-
-
-
-
0.5 mA
50
50
50
mA
mA
mA
tRC = min
Note:
Icc depends on output load condition when the device is selected.
Icc max is specified at the output open condition, Icc is specified as an average current.
CAPACITANCE
(Ta =25
°
C, f = 1M HZ, T2316405A-10 Vcc = 2.6V, T2316407A-50/60/70 Vcc = 3.3V)
Parameter
Input Capacitance
(address)
Input Capacitance
( RAS , CAS , WE , OE )
Output Capacitance
(data-in/out)
C I2
C I/O
-
-
7
7
pF
pF
Symbol
C I1
Typ
-
Max
5
Unit
pF
Taiwan Memory Technology, Inc. reserves the right
P. 4
to change products or specifications without notice.
Publication Date: APR. 2001
Revision:0.B
TMT [ TAIWAN MEMORY TECHNOLOGY ]
