< HVIGBT MODULES >
CM1000HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS
Symbol
V
CES
V
GES
I
C
I
CRM
I
E
I
ERM
P
tot
V
iso
V
e
T
j
T
jop
T
stg
t
psc
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter current
(Note 2)
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Maximum power dissipation
(Note 3)
Isolation voltage
Partial discharge extinction voltage
Junction temperature
Operating junction temperature
Storage temperature
Short circuit pulse width
Conditions
V
GE
= 0V, T
j
= -40…+150°C
V
GE
= 0V, T
j
=
−50°C
V
CE
= 0V, T
j
= 25°C
DC, T
c
= 95°C
(Note 1)
Pulse
DC
(Note 1)
Pulse
T
c
= 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1 min.
RMS, sinusoidal, f = 60Hz, Q
PD
≤
10 pC
V
CC
= 2500V, V
CE
≤
V
CES
, V
GE
=15V, T
j
=150°C
Ratings
3300
3200
± 20
1000
2000
1000
2000
10400
6000
2600
−50
~ +150
−50
~ +150
−55
~ +150
10
Unit
V
V
A
A
A
A
W
V
V
°C
°C
°C
s
ELECTRICAL CHARACTERISTICS
Symbol
Item
Conditions
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C
Min
—
—
—
5.7
−0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ
—
4.0
24.0
6.2
—
140.0
8.7
4.0
10.7
2.45
3.10
3.25
1.00
0.95
0.95
0.28
0.30
0.30
1.40
1.85
2.00
1.50
1.95
2.15
2.70
2.80
2.85
0.30
0.35
0.40
1.35
1.65
1.70
1.50
1.80
1.90
Max
4.0
—
—
6.7
0.5
—
—
—
—
—
3.70
—
—
1.25
1.25
—
0.50
0.50
—
—
—
—
—
—
—
3.30
3.30
—
1.00
1.00
—
—
—
—
—
—
Unit
I
CES
V
GE(th)
I
GES
C
ies
C
oes
C
res
Q
G
V
CEsat
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Collector-emitter saturation voltage
V
CE
= V
CES
, V
GE
= 0V
V
CE
= 10 V, I
C
= 100 mA, T
j
= 25°C
V
GE
= V
GES
, V
CE
= 0V, T
j
= 25°C
V
CE
= 10 V, V
GE
= 0 V, f = 100 kHz
T
j
= 25°C
V
CC
= 1800V, I
C
= 1000A, V
GE
=
±15V
I
C
= 1000 A
V
GE
= 15 V
(Note 4)
mA
V
µA
nF
nF
nF
µC
V
t
d(on)
Turn-on delay time
V
CC
= 1800 V
I
C
= 1000 A
V
GE
= ±15 V
R
G(on)
= 2.4
Ω
L
s
= 150 nH
Inductive load
t
r
Turn-on rise time
E
on(10%)
Turn-on switching energy
(Note 5)
E
on
Turn-on switching energy
(Note 6)
t
d(off)
Turn-off delay time
V
CC
= 1800 V
I
C
= 1000 A
V
GE
= ±15 V
R
G(off)
= 8.4
Ω
L
s
= 150 nH
Inductive load
t
f
Turn-off fall time
E
off(10%)
Turn-off switching energy
(Note 5)
E
off
Turn-off switching energy
(Note 6)
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C
T
j
= 25°C
T
j
= 125°C
T
j
= 150°C
µs
µs
J
J
µs
µs
J
J
December 2012
(HVM-1061-B)
2
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
