< HVIGBT MODULES >
CM1000HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
ELECTRICAL CHARACTERISTICS (continuation)
Limits
Typ
Symbol
Item
Conditions
Unit
V
Min
—
—
—
—
—
—
—
—
—
—
—
—
Max
—
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 25°C
Tj = 125°C
Tj = 150°C
2.15
2.30
2.25
0.50
0.70
0.80
850
IE = 1000 A (Note 4)
VGE = 0 V
(Note 2)
(Note 2)
(Note 2)
(Note 2)
VEC
Emitter-collector voltage
2.80
—
—
trr
Reverse recovery time
µs
A
—
—
—
—
—
Irr
Reverse recovery current
1000
1050
700
VCC = 1800 V
IC = 1000 A
VGE = ±15 V
Qrr
Reverse recovery charge
Reverse recovery energy
µC
J
1150
1350
0.70
1.20
1.35
0.80
1.35
1.55
RG(on) = 2.4 Ω
—
—
Ls = 150 nH
(Note 2)
(Note 5)
Inductive load
Erec(10%)
—
—
—
—
(Note 2)
(Note 6)
Reverse recovery energy
Erec
J
—
—
—
THERMAL CHARACTERISTICS
Limits
Typ
—
Symbol
Item
Conditions
Unit
Min
—
Max
12.0
22.5
—
Rth(j-c)Q
Rth(j-c)D
Rth(c-s)
Junction to Case, IGBT part
Junction to Case, FWDi part
K/kW
K/kW
K/kW
Thermal resistance
—
—
Contact thermal resistance
Case to heat sink, grease = 1W/m·k, D(c-s) = 100m
—
9.0
MECHANICAL CHARACTERISTICS
Limits
Typ
—
Symbol
Item
Conditions
Unit
Min
7.0
3.0
1.0
—
Max
22.0
6.0
3.0
—
Mt
M8 : Main terminals screw
M6 : Mounting screw
N·m
N·m
N·m
kg
Mounting torque
Ms
—
Mt
M4 : Auxiliary terminals screw
—
m
Mass
0.8
—
CTI
da
Comparative tracking index
Clearance
600
19.5
32.0
—
—
—
—
—
mm
mm
nH
ds
Creepage distance
Parasitic stray inductance
Internal lead resistance
Internal gate resistance
—
—
LP CE
RCC’+EE’
rg
16.5
0.18
2.25
—
TC = 25°C
TC = 25°C
—
—
mꢀ
ꢀ
—
—
Note1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating(150°C).
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt.
6. Definition of all items is according to IEC 60747, unless otherwise specified.
December 2012 (HVM-1061-B)
3
MITSUBISHI [ Mitsubishi Group ]
