< HVIGBT MODULES >
CM1000HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
CAPACITANCE CHARACTERISTICS
(TYPICAL)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
1000
20
VCE = 1800V, IC = 1000A
Tj = 2 5° C
15
Ci es
10
5
100
0
10
Coes
-5
Cres
-10
-15
VGE = 0V, Tj = 25°C
f = 10 0kHz
1
0.1
1
10
100
0
4
8
12
16
Collector-Emitter Voltage [V]
Gate Charge [µC]
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
7
7
CC
V
GE
CC
V
GE
= 1800 V, V = ±15V
= 1800 V, V = ±15V
G(on)
R
G( off)
= 2.4ꢀ, R
G(on)
R
G( off)
= 2.4ꢀ, R
= 8.4ꢀ
= 8.4ꢀ
Eon
6
5
4
3
2
1
0
6
5
4
3
2
1
0
L
S = 150nH, Tj = 125°C
LS = 150nH, Tj = 150°C
In ductive load
In ductive load
Eon
Eoff
Eoff
Erec
Erec
0
400
800
1200
1600
2000
0
400
800
1200
1600
2000
Collector Current [A]
Collector Current [A]
December 2012 (HVM-1061-B)
5
MITSUBISHI [ Mitsubishi Group ]
