< HVIGBT MODULES >
CM1000HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
100
V
CC
= 18 00 V, V
GE
= ± 15V
R
G(on)
= 2.4Ω, L
S
= 150 nH
Tj = 1 25°C, In ductive l oa d
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS (TYPICAL)
100
V
CC
= 18 00 V, V
GE
= ± 15V
R
G(on)
= 2.4Ω, L
S
= 150 nH
Tj = 1 50°C, In ductive l oa d
10000
10000
Reverse Recovery Current [A]
10
Irr
1000
10
Irr
1000
1
trr
100
1
trr
100
0.1
100
1000
10
10000
0.1
100
1000
10
10000
Emitter Current [A]
Emitter Current [A]
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2
R
th(j-c )Q
= 12 .0 K/kW
R
th(j-c )D
= 22.5K/kW
Normalized Transient Thermal impedance
1
t
Z
th
(
j
c
)
(
t
)
½
R
i
1
exp
i
½
i
½
1
n
0.8
0.6
R
i
[K/kW] :
i
[sec] :
1
0.0096
0.0001
2
0.1893
0.0058
3
0.4044
0.0602
4
0.3967
0.3512
0.4
0.2
0
0.001
0.01
0.1
1
10
Time [s]
December 2012
(HVM-1061-B)
7
Reverse Recovery Current [A]
Reverse Recovery Time [µs]
Reverse Recovery Time [µs]
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
