< HVIGBT MODULES >
CM1000HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
SHORT CIRCUIT
SAFE OPERATING AREA (SCSOA)
4000
16
VCC 2500V, VGE = ±1 5V
VCC 2500 V, VGE = ± 15V
Tj = 150 °C, RG(o ff) = 8.4ꢀ
RG(on) = 2.4ꢀ, RG( off) = 8.4ꢀ
Tj = 150°C
3000
2000
1000
0
12
8
4
0
0
1000
2000
3000
4000
0
1000
2000
3000
4000
Collector-Emitter Voltage [V]
Collector-Emitter Voltage [V]
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA (RRSOA)
4000
VCC 2500 V, di/d t < 6kA/µs
Tj = 150 °C
3000
2000
1000
0
0
1000
2000
3000
4000
Emitter-Collector Voltage [V]
December 2012 (HVM-1061-B)
8
MITSUBISHI [ Mitsubishi Group ]
