< HVIGBT MODULES >
CM1000HC-66R
HIGH POWER SWITCHING USE
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
TRANSFER CHARACTERISTICS
(TYPICAL)
(TYPICAL)
2000
2000
Tj = 150°C
VCE = VGE
VGE = 19V
1600
1600
1200
800
400
0
VGE = 11 V
VGE = 15V
1200
800
400
0
VG E = 13 V
VGE = 9V
Tj = 25° C
Tj = 1 50 °C
0
1
2
3
4
5
6
0
2
4
6
8
10
12
Collector - Emitter Voltage [V]
Gate - Emitter Voltage [V]
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
2000
2000
VGE = 15 V
1600
1600
1200
800
400
0
Tj = 125°C
Tj = 25°C
Tj = 25°C
Tj = 1 50 °C
1200
Tj = 1 25°C
Tj = 150°C
800
400
0
0
1
2
3
4
5
0
1
2
3
4
5
Collector-Emitter Saturation Voltage [V]
Emitter-Collector Voltage [V]
December 2012 (HVM-1061-B)
4
MITSUBISHI [ Mitsubishi Group ]
