2N7002E
Philips Semiconductors
N-channel TrenchMOS™ FET
3. Ordering information
Table 2:
Ordering information
Type number
Package
Name
Description
Version
2N7002E
TO-236AB plastic surface mounted package; 3 leads
SOT23
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
60
Unit
V
VDS
VDGR
VGS
VGSM
ID
drain-source voltage (DC)
25 °C ≤ Tj ≤ 150 °C
-
drain-gate voltage (DC)
gate-source voltage (DC)
peak gate-source voltage
drain current (DC)
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
-
60
V
-
±30
±40
385
245
1.5
V
tp ≤ 50 µs; pulsed; duty cycle = 25 %
Tsp = 25 °C; VGS = 10 V; Figure 2 and 3
Tsp = 100 °C; VGS = 10 V; Figure 2
Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tsp = 25 °C; Figure 1
-
V
-
mA
mA
A
-
IDM
Ptot
Tstg
Tj
peak drain current
-
total power dissipation
storage temperature
junction temperature
-
0.83
+150
+150
W
−65
−65
°C
°C
Source-drain diode
IS
source (diode forward) current (DC) Tsp = 25 °C
-
-
385
1.5
mA
A
ISM
peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs
9397 750 14944
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 26 April 2005
2 of 11
NXP [ NXP ]
