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产品型号NDS9430的Datasheet PDF文件预览

May 2002

NDS9430

30V P-Channel PowerTrench MOSFET

General Description

Features

This P-Channel MOSFET is a rugged gate version of

Fairchild Semiconductor’s advanced PowerTrench

process. It has been optimized for power management

applications requiring a wide range of gate drive voltage

ratings (4.5V – 20V).

• –5.3 A, –30 V

R_DS(ON)= 60 mΩ @ V_GS= –10 V

R_DS(ON)=100 mΩ @ V_GS= –4.5 V

• Low gate charge

• Fast switching speed

Applications

• Power management

• Load switch

• High performance trench technology for extremely

low R_DS(ON)

• Battery protection

• High power and current handling capability

SO-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

–30

V_GSS

Gate-Source Voltage

±20

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

–5.3

–20

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

2.5

P_D

1.2

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1c)

(Note 1)

125

R_θJA

R_θJC

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

NDS9430

13’’

12mm

2500 units

NDS9430 Rev B

2002 Fairchild Semiconductor Corporation

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BV_DSS

Drain–Source Breakdown Voltage

–30

V_GS= 0 V, I_D= –250 µA

∆BVDSS

∆T_J

Breakdown Voltage Temperature

Coefficient

–23

I_D= –250 µA, Referenced to 25°C

mV/°C

I_DSS

Zero Gate Voltage Drain Current

V_DS= –24 V,

V_GS= 0 V

–1

µA

I_GSSF

I_GSSR

Gate–Body Leakage, Forward

Gate–Body Leakage, Reverse

V_GS= 20 V,

V_GS= –20 V

V_DS= 0 V

100

–100

On Characteristics

(Note 2)

V_GS(th)

Gate Threshold Voltage

–1

–1.7

4.5

–3

V_DS= V_GS, I_D= –250 µA

∆VGS(th)

∆T_J

Gate Threshold Voltage

Temperature Coefficient

I_D= –250 µA, Referenced to 25°C

mV/°C

mΩ

R_DS(on)

Static Drain–Source

On–Resistance

V_GS= –10 V,

I_D= –5.3 A

100

V_GS= –4.5 V, I_D= –2 A

V_GS= –10 V, I_D= –5.3 A,T_J=125°C

I_D(on)

g_FS

On–State Drain Current

V_GS= –10 V,

V_DS= –5 V,

V_DS= –5 V

I_D= –5.3 A

–20

Forward Transconductance

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

528

132

V_DS= –15 V,

f = 1.0 MHz

V _GS= 0 V,

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn–On Delay Time

Turn–On Rise Time

Turn–Off Delay Time

Turn–Off Fall Time

Total Gate Charge

Gate–Source Charge

Gate–Drain Charge

V_DD= –15 V,

V_GS= –10 V,

I_D= –1 A,

R_GEN= 6 Ω

Q_g

Q_gs

Q_gd

2.2

_DS= –15 V,

I_D= –4 A,

V_GS= –10 V

Drain–Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain–Source Diode Forward Current

–2.1

–1.2

Drain–Source Diode Forward

V_SD

_GS= 0 V, I_S= –2.1 A (Note 2)

–0.8

Voltage

Notes:

1. R_θJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

the drain pins. R_θJCis guaranteed by design while R_θCAis determined by the user's board design.

a) 50°C/W when

mounted on a 1in²

pad of 2 oz copper

b) 105°C/W when

mounted on a .04 in²

pad of 2 oz copper

c) 125°C/W when mounted on a

minimum pad.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%

NDS9430 Rev B

Typical Characteristics

1.8

1.6

1.4

1.2

V_GS= -10V

-6.0V

-5.0V

V_GS=-4.0V

-4.5V

-4.0V

-5.0V

-6.0V

-7.0V

-3.5V

-8.0V

-10V

-3.0V

0.8

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

-I_D, DRAIN CURRENT (A)

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

0.25

1.6

I_D= -5.3A

_GS= -10V

I_D= -2.8A

0.2

0.15

0.1

1.4

1.2

T_A= 125^oC

T_A= 25^oC

0.8

0.6

0.05

-50

-25

100

125

150

175

T_J, JUNCTION TEMPERATURE (^oC)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with

Temperature.

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

100

25^oC

V_DS= -5V

T_A= -55^oC

V_GS=0V

T_A= 125^oC

125^oC

25^oC

0.1

-55^oC

0.01

0.001

0.0001

1.5

2.5

3.5

4.5

0.2

0.4

0.6

0.8

1.2

1.4

-V_GS, GATE TO SOURCE VOLTAGE (V)

-V_SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

NDS9430 Rev B

Typical Characteristics

800

700

600

500

400

300

200

100

I_D= -5.3A

f = 1 MHz

_GS= 0 V

V_DS= -5V

-10V

-15V

C_ISS

C_OSS

C_RSS

Q_g, GATE CHARGE (nC)

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

100

SINGLE PULSE

R_θJA= 125°C/W

T_A= 25°C

100µs

R_DS(ON)LIMIT

1ms

10ms

100ms

10s

V_GS= -10V

SINGLE PULSE

R_θJA= 125^oC/W

T_A= 25^oC

0.1

0.01

0.1

100

0.001

0.01

0.1

100

1000

-V_DS, DRAIN-SOURCE VOLTAGE (V)

t₁, TIME (sec)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

D = 0.5

R_θJA(t) = r(t) + R_θJA

0.2

_θJA= 125^oC/W

0.1

0.05

0.02

P(pk)

t₁

0.01

t₂

0.01

T_J- T_A= P * R_θJA(t)

Duty Cycle, D = t₁/ t₂

SINGLE PULSE

0.001

0.0001

0.001

0.01

0.1

100

1000

t₁, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c.

Transient thermal response will change depending on the circuit board design.

NDS9430 Rev B

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarksꢀ

SILENT SWITCHER

SMARTSTART

SPM

STAR*POWER

Stealth

SuperSOT-3

SuperSOT-6

SuperSOT-8

SyncFET

UHC

UltraFET

VCX

FAST

ACEx

Bottomless

CoolFET

CROSSVOLT

DenseTrench

DOME

MICROWIRE

OPTOLOGIC

OPTOPLANAR

PACMAN

POP

FASTr

FRFET

GlobalOptoisolator

GTO

HiSeC

Power247

I²C

EcoSPARK

PowerTrench

E²CMOS^TM

ISOPLANAR

LittleFET

MicroFET

MicroPak

QFET

QT Optoelectronics

Quiet Series

EnSigna^TM

TinyLogic

TruTranslation

FACT

FACT Quiet Series

STAR*POWER is used under license

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TOANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGNꢀ FAIRCHILD

DOES NOTASSUMEANY LIABILITYARISING OUT OF THEAPPLICATION OR USE OFANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERSꢀ

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUTTHE EXPRESS WRITTENAPPROVALOF FAIRCHILD SEMICONDUCTOR CORPORATIONꢀ

As used herein:

1ꢀ Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

userꢀ

2ꢀ A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectivenessꢀ

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product developmentꢀ Specifications may change in

any manner without noticeꢀ

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later dateꢀ

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

designꢀ

No Identification Needed

Obsolete

Full Production

This datasheet contains final specificationsꢀ Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve designꢀ

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductorꢀ

The datasheet is printed for reference information onlyꢀ

Revꢀ H5

型号:	NDS9430
生命周期：	Obsolete
包装说明：	,
Reach Compliance Code：	compliant
风险等级：	5.68
Is Samacsys：	N
Base Number Matches：	1

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