欢迎访问ic37.com |
会员登录 免费注册
会员中心
企业资讯   人才招聘  
电子百科

电子百科

Datasheet下载 IC品牌 缩略语 技术文章 IC型号

产品导航

ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789
产品
  • 产品
  • PDF

    • 最近搜索

    热门搜索

    搜索
    发布采购
    所在地： 型号： 精确
    • 批量询价
    •  
    • 供应商
    • 型号
    • 数量
    • 厂商
    • 封装
    • 批号
    • 交易说明
    • 询价
    更多
    • RFD8P059A图

    • 深圳市芯福林电子有限公司

       该会员已使用本站15年以上
    • RFD8P059A
    • 数量65000 
    • 厂家FAI 
    • 封装原厂封装 
    • 批号23+ 
    • 真实库存全新原装正品！代理此型号
    • QQ:2881495753QQ：2881495753 复制
    • 0755-23605827 QQ:2881495753
    • RFD8P059A图

    • 深圳市惊羽科技有限公司

       该会员已使用本站11年以上
    • RFD8P059A
    • 数量57500 
    • 厂家ON-安森美 
    • 封装TO-252-3 
    • 批号▉▉：2年内 
    • ▉▉￥10一一有问必回一一有长期订货一备货HK仓库
    • QQ:43871025QQ：43871025 复制
    • 131-4700-5145---Q-微-恭-候---有-问-秒-回 QQ:43871025
    • RFD8P059A图

    • 深圳市华芯盛世科技有限公司

       该会员已使用本站13年以上
    • RFD8P059A
    • 数量865000 
    • 厂家FAIRCHILD/仙童 
    • 封装TO-252 
    • 批号最新批号 
    • 一级代理,原装特价现货！
    • QQ:2881475757QQ：2881475757 复制
    • 0755-83225692 QQ:2881475757

    产品型号RFD8P05SM的Datasheet PDF文件预览

    RFD8P05, RFD8P05SM, RFP8P05  
    Data Sheet  
    July 1999  
    File Number 2384.2  
    8A, 50V, 0.300 Ohm, P-Channel Power  
    MOSFETs  
    Features  
    • 8A, 50V  
    These products are P-Channel power MOSFETs  
    manufactured using the MegaFET process. This process,  
    which uses feature sizes approaching those of LSI circuits,  
    gives optimum utilization of silicon, resulting in outstanding  
    performance. They were designed for use in applications  
    such as switching regulators, switching converters, motor  
    drivers, and relay drivers. These transistors can be operated  
    directly from integrated circuits.  
    • r  
    = 0.300Ω  
    DS(ON)  
    • UIS SOA Rating Curve  
    • SOA is Power Dissipation Limited  
    • Nanosecond Switching Speeds  
    • Linear Transfer Characteristics  
    • High Input Impedance  
    Formerly developmental type TA09832.  
    • Related Literature  
    - TB334 “Guidelines for Soldering Surface Mount  
    Components to PC Boards”  
    Ordering Information  
    PART NUMBER  
    PACKAGE  
    BRAND  
    Symbol  
    RFD8P05  
    TO-251AA  
    D8P05  
    D8P05  
    D
    RFD8P05SM  
    RFP8P05  
    TO-252AA  
    TO-220AB  
    RFP8P05  
    G
    NOTE: When ordering, use the entire part number. Add the suffix 9A  
    to obtain the TO-252AA variant in tape and reel, i.e.,  
    RFD8P05SM9A.  
    S
    Packaging  
    JEDEC TO-220AB  
    JEDEC TO-251AA  
    SOURCE  
    DRAIN  
    GATE  
    SOURCE  
    DRAIN  
    GATE  
    DRAIN (FLANGE)  
    DRAIN (FLANGE)  
    JEDEC TO-252AA  
    DRAIN (FLANGE)  
    GATE  
    SOURCE  
    CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
    http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999.  
    4-112  
    RFD8P05, RFD8P05SM, RFP8P05  
    o
    Absolute Maximum Ratings  
    T
    = 25 C Unless Otherwise Specified  
    C
    RFD8P05,  
    RFD8P05SM, RFP8P05  
    UNITS  
    Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
    -50  
    -50  
    V
    V
    DSS  
    Drain to Gate Voltage (R  
    GS  
    = 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V  
    DGR  
    Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I  
    -8  
    A
    D
    Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I  
    -20  
    A
    DM  
    Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V  
    GS  
    ±20  
    V
    Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P  
    48  
    W
    D
    o
    Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  
    0.27  
    W/ C  
    Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E  
    See Figure 6  
    -55 to 175  
    AS  
    o
    Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T  
    J
    C
    STG  
    Maximum Temperature for Soldering  
    Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T  
    Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T  
    o
    300  
    260  
    C
    C
    L
    o
    pkg  
    CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the  
    device at these or any other conditions above those indicated in the operational sections of this specification is not implied.  
    NOTE:  
    o
    o
    1. T = 25 C to 150 C.  
    J
    o
    Electrical Specifications  
    T
    = 25 C Unless Otherwise Specified  
    C
    PARAMETER  
    SYMBOL  
    TEST CONDITIONS  
    = 0V (Figure 9)  
    MIN  
    TYP MAX UNITS  
    Drain to Source Breakdown Voltage  
    Gate Threshold Voltage  
    BV  
    DSS  
    I
    = 250µA, V  
    GS  
    -50  
    -
    -
    -
    -4  
    V
    D
    V
    V
    V
    V
    V
    = V , I = 250µA (Figure 8)  
    DS  
    -2  
    -
    V
    GS(TH)  
    GS  
    DS  
    DS  
    GS  
    D
    Zero Gate Voltage Drain Current  
    I
    = Rated BV  
    , V  
    = 0V  
    , T = 150 C  
    -
    1
    µA  
    µA  
    nA  
    Ω
    DSS  
    DSS GS  
    o
    = 0.8 x Rated BV  
    -
    -
    25  
    ±100  
    0.300  
    60  
    -
    DSS  
    J
    Gate to Source Leakage Current  
    I
    = ±20V  
    -
    -
    GSS  
    Drain to Source On Resistance (Note 2)  
    Turn-On Time  
    r
    I
    = 8A, V  
    = -10V (Figure 7)  
    -
    -
    DS(ON)  
    D
    GS  
    t
    V
    V
    = -25V, I ≈ 4A, R = 9.1Ω, R = 6.25Ω,  
    -
    -
    ns  
    ON  
    DD  
    GS  
    D
    G
    L
    = -10V  
    Turn-On Delay Time  
    Rise Time  
    t
    -
    16  
    30  
    42  
    20  
    -
    ns  
    d(ON)  
    t
    -
    -
    ns  
    r
    Turn-Off Delay Time  
    Fall Time  
    t
    -
    -
    ns  
    d(OFF)  
    t
    -
    -
    ns  
    f
    Turn-Off Time  
    t
    -
    100  
    80  
    40  
    2
    ns  
    OFF  
    Total Gate Charge  
    Q
    V
    V
    V
    = 0 to -20V  
    = 0 to -10V  
    = 0 to -2V  
    V
    = -40V, I = 8A,R = 5Ω,  
    -
    -
    nC  
    nC  
    nC  
    C/W  
    C/W  
    C/W  
    g(TOT)  
    GS  
    GS  
    GS  
    DD  
    D
    L
    I
    = -0.3mA  
    G(REF)  
    Gate Charge at -5V  
    Q
    -
    -
    g(-10)  
    Threshold Gate Charge  
    Thermal Resistance Junction to Case  
    Thermal Resistance Junction to Ambient  
    Q
    -
    -
    g(TH)  
    o
    o
    o
    R
    -
    -
    3.125  
    100  
    62.5  
    θJC  
    θJA  
    R
    TO-251AA, TO-252AA  
    TO-220AB  
    -
    -
    o
    Source to Drain Diode Specifications T = 25 C Unless Otherwise Specified  
    C
    PARAMETER  
    Source to Drain Diode Voltage (Note 2)  
    Reverse Recovery Time  
    NOTE:  
    SYMBOL  
    TEST CONDITIONS  
    MIN  
    TYP  
    MAX  
    UNITS  
    V
    V
    I
    I
    = -8A  
    -
    -
    -
    -
    -1.5  
    125  
    SD  
    SD  
    t
    = -8A, dI /dt = 100A/µs  
    SD  
    ns  
    rr  
    SD  
    2. Pulse test: pulse width ≤ 300µs, Duty Cycle ≤ 2%.  
    3. Repetitive rating: pulse width is limited by maximum junction temperature.  
    4-113  
    RFD8P05, RFD8P05SM, RFP8P05  
    Typical Performance Curves Unless Otherwise Specified  
    1.2  
    1.0  
    0.8  
    0.6  
    0.4  
    0.2  
    0
    -10  
    -8  
    -6  
    -4  
    -2  
    0
    150  
    125  
    175  
    25  
    50  
    75  
    100  
    125  
    o
    0
    25  
    50  
    75  
    100  
    175  
    150  
    o
    T , CASE TEMPERATURE ( C)  
    C
    T
    , CASE TEMPERATURE ( C)  
    C
    FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE  
    TEMPERATURE  
    FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs  
    CASE TEMPERATURE  
    10  
    100  
    If R = 0  
    t
    = (L) (I ) / (1.3 RATED BV  
    AS  
    - V  
    DSS DD  
    )
    AV  
    If R ≠ 0  
    DC OPERATION  
    t
    = (L/R) ln [(I *R) / (1.3 RATED BV  
    AS  
    - V ) + 1]  
    DD  
    AV  
    DSS  
    OPERATION IN THIS  
    AREA IS LIMITED BY r  
    I
    DM  
    10  
    o
    STARTING T = 25 C  
    J
    DS(ON)  
    o
    STARTING T = 150 C  
    J
    1
    o
    T
    T
    = 25 C  
    C
    J
    o
    = 175 C  
    1
    0.1  
    -100  
    -1  
    -10  
    , DRAIN TO SOURCE VOLTAGE (V)  
    0.1  
    1
    10  
    100  
    V
    t
    , TIME IN AVALANCHE (ms)  
    DS  
    AV  
    FIGURE 3. FORWARD BIAS SAFE OPERATING AREA  
    FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY  
    20  
    -20  
    PULSE DURATION = 80µs  
    PULSE DURATION = 80µs  
    V
    = -10V  
    GS  
    o
    V
    = -9V  
    25 C  
    DUTY CYCLE = 0.5% MAX  
    = 15V  
    DUTY CYCLE = 0.5% MAX  
    GS  
    o
    V
    T
    = 25 C  
    DD  
    C
    o
    16  
    12  
    8
    -16  
    -12  
    -8  
    175 C  
    V
    = -8V  
    = -7V  
    GS  
    o
    -55 C  
    V
    GS  
    V
    = -6V  
    = -5V  
    GS  
    -4  
    4
    V
    GS  
    V
    = -4V  
    GS  
    0
    0
    0
    -2  
    V
    -4  
    -6  
    -8  
    -10  
    0
    -3  
    -6  
    -9  
    -12  
    -15  
    , DRAIN TO SOURCE VOLTAGE (V)  
    V
    , GATE TO SOURCE VOLTAGE (V)  
    DS  
    GS  
    FIGURE 5. SATURATION CHARACTERISTICS  
    FIGURE 6. TRANSFER CHARACTERISTICS  
    4-114  
    RFD8P05, RFD8P05SM, RFP8P05  
    Typical Performance Curves Unless Otherwise Specified  
    3.0  
    1.50  
    1.25  
    1.00  
    0.75  
    0.50  
    0.25  
    0
    PULSE DURATION = 80µs  
    DUTY CYCLE =0.5% MAX  
    V
    = V , I = -250µA  
    DS  
    GS  
    D
    2.5  
    2.0  
    1.5  
    1.0  
    V
    = -10V, I = -8A  
    GS  
    D
    0.5  
    0
    -50  
    0
    50  
    100  
    150  
    200  
    -50  
    0
    50  
    100  
    150  
    o
    200  
    o
    T , JUNCTION TEMPERATURE ( C)  
    J
    T , JUNCTION TEMPERATURE ( C)  
    J
    FIGURE 7. NORMALIZED DRAIN TO SOURCE ON  
    RESISTANCE vs JUNCTION TEMPERATURE  
    FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs  
    JUNCTION TEMPERATURE  
    1000  
    2.0  
    V
    = 0V, f = 1MHz  
    GS  
    I
    = -250µA  
    D
    C
    C
    C
    = C  
    + C  
    GD  
    ISS  
    GS  
    = C  
    RSS  
    OSS  
    GD  
    800  
    600  
    400  
    200  
    0
    ≈ C + C  
    DS  
    GS  
    1.5  
    1.0  
    0.5  
    0
    C
    ISS  
    C
    OSS  
    C
    RSS  
    -15  
    0
    -5  
    -10  
    -20  
    -25  
    -50  
    0
    50  
    100  
    150  
    200  
    o
    T , JUNCTION TEMPERATURE ( C)  
    V
    , DRAIN TO SOURCE VOLTAGE (V)  
    DS  
    J
    FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN  
    VOLTAGE vs JUNCTION TEMPERATURE  
    FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE  
    -50  
    -10  
    GATE  
    SOURCE  
    VOLTAGE  
    V
    = BV  
    DSS  
    V
    = BV  
    DSS  
    DD  
    DD  
    -37.5  
    -25  
    -8  
    -6  
    R
    = 6.25Ω  
    = 0.3mA  
    L
    I
    G(REF)  
    V
    = 10V  
    GS  
    0.75BV  
    0.50BV  
    0.25BV  
    DSS  
    DSS  
    DSS  
    -12.5  
    -4  
    -2  
    0
    DRAIN TO SOURCE  
    VOLTAGE  
    0
    I
    I
    I
    I
    G(REF)  
    G(ACT)  
    G(REF)  
    20  
    80  
    TIME (µs)  
    G(ACT)  
    NOTE: Refer to Application Notes AN7254 and AN7260.  
    FIGURE 11. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT  
    4-115  
    RFD8P05, RFD8P05SM, RFP8P05  
    Test Circuits and Waveforms  
    V
    DS  
    t
    AV  
    L
    0
    VARY t TO OBTAIN  
    P
    -
    R
    REQUIRED PEAK I  
    G
    AS  
    V
    DD  
    +
    DUT  
    0V  
    V
    DD  
    t
    P
    I
    AS  
    V
    GS  
    V
    DS  
    I
    AS  
    t
    P
    0.01Ω  
    BV  
    DSS  
    FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT  
    FIGURE 13. UNCLAMPED ENERGY WAVEFORMS  
    t
    t
    ON  
    OFF  
    t
    t
    d(OFF)  
    d(ON)  
    t
    t
    f
    r
    0
    10%  
    10%  
    R
    L
    DUT  
    -
    V
    DS  
    90%  
    90%  
    V
    DD  
    R
    G
    +
    V
    0
    V
    GS  
    GS  
    10%  
    50%  
    50%  
    90%  
    PULSE WIDTH  
    FIGURE 14. SWITCHING TIME TEST CIRCUIT  
    FIGURE 15. RESISTIVE SWITCHING WAVEFORMS  
    V
    V
    DS  
    DS  
    Q
    g(TH)  
    R
    L
    0
    V
    = -1V  
    -V  
    GS  
    V
    = -5V  
    V
    GS  
    GS  
    GS  
    -
    V
    DD  
    Q
    g(-5)  
    +
    V
    = -10V  
    GS  
    V
    DUT  
    DD  
    I
    g(REF)  
    Q
    g(TOT)  
    0
    I
    g(REF)  
    FIGURE 16. GATE CHARGE TEST CIRCUIT  
    FIGURE 17. GATE CHARGE WAVEFORMS  
    4-116  
    RFD8P05, RFD8P05SM, RFP8P05  
    All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.  
    Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-  
    out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and  
    reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result  
    from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
    For information regarding Intersil Corporation and its products, see web site http://www.intersil.com  
    Sales Office Headquarters  
    NORTH AMERICA  
    EUROPE  
    ASIA  
    Intersil Corporation  
    Intersil SA  
    Mercure Center  
    100, Rue de la Fusee  
    1130 Brussels, Belgium  
    TEL: (32) 2.724.2111  
    FAX: (32) 2.724.22.05  
    Intersil (Taiwan) Ltd.  
    7F-6, No. 101 Fu Hsing North Road  
    Taipei, Taiwan  
    Republic of China  
    TEL: (886) 2 2716 9310  
    FAX: (886) 2 2715 3029  
    P. O. Box 883, Mail Stop 53-204  
    Melbourne, FL 32902  
    TEL: (407) 724-7000  
    FAX: (407) 724-7240  
    4-117  
    配单直通车
    RFD8P05SM产品参数
    型号:RFD8P05SM
    是否Rohs认证： 不符合
    生命周期：Obsolete
    Reach Compliance Code：not_compliant
    ECCN代码：EAR99
    风险等级：5.74
    其他特性：MEGAFET
    外壳连接：DRAIN
    配置：SINGLE WITH BUILT-IN DIODE
    最小漏源击穿电压：50 V
    最大漏极电流 (Abs) (ID)：8 A
    最大漏极电流 (ID)：8 A
    最大漏源导通电阻：0.3 Ω
    FET 技术：METAL-OXIDE SEMICONDUCTOR
    JEDEC-95代码：TO-252AA
    JESD-30 代码：R-PSSO-G2
    JESD-609代码：e0
    元件数量：1
    端子数量：2
    工作模式：ENHANCEMENT MODE
    最高工作温度：175 °C
    封装主体材料：PLASTIC/EPOXY
    封装形状：RECTANGULAR
    封装形式：SMALL OUTLINE
    峰值回流温度（摄氏度）：NOT SPECIFIED
    极性/信道类型：P-CHANNEL
    功耗环境最大值：48 W
    最大功率耗散 (Abs)：40 W
    最大脉冲漏极电流 (IDM)：20 A
    认证状态：Not Qualified
    子类别：Other Transistors
    表面贴装：YES
    端子面层：Tin/Lead (Sn/Pb)
    端子形式：GULL WING
    端子位置：SINGLE
    处于峰值回流温度下的最长时间：NOT SPECIFIED
    晶体管应用：SWITCHING
    晶体管元件材料：SILICON
    最大关闭时间（toff）：100 ns
    最大开启时间（吨）：60 ns
    Base Number Matches：1
    •  
    • 供货商
    • 型号 *
    • 数量*
    • 厂商
    • 封装
    • 批号
    • 交易说明
    • 询价
  • 免费注册 忘记密码
    • 批量询价选中的记录已选中0条,每次最多15条。

    IC37:专业IC行业平台

    专业IC领域供求交易平台:提供全面的IC Datasheet资料和资讯，Datasheet 1000万数据，IC品牌1000多家。

    网站导航 Datasheet资料库 电子术语 电子百科
    服务中心 常见问题 委托交易 会员服务
    关于我们 公司简介 联系我们 免责申明

    产品索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

    深圳网络警察报警平台 公共信息安全网络监察 经营性网站备案信息 不良信息举报中心 工商网监电子标识 全国公安机关备案
    服务电话： 0755-32882616 0755-32882606 0755-32882608 0755-32882607 值班和投诉电话：13715251531 ©2004-2024 IC37网 版权所有：ic37.com 版权申明 公网安备44030402000606 粤ICP备13051289号-6
     复制成功！