RFD8P05, RFD8P05SM, RFP8P05
o
Absolute Maximum Ratings
T
= 25 C Unless Otherwise Specified
C
RFD8P05,
RFD8P05SM, RFP8P05
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
-50
-50
V
V
DSS
Drain to Gate Voltage (R
GS
= 20KΩ) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
-8
A
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
-20
A
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
±20
V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
48
W
D
o
Dissipation Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
0.27
W/ C
Single Pulse Avalanche Energy Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
See Figure 6
-55 to 175
AS
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
J
C
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
o
300
260
C
C
L
o
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 150 C.
J
o
Electrical Specifications
T
= 25 C Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
= 0V (Figure 9)
MIN
TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
BV
DSS
I
= 250µA, V
GS
-50
-
-
-
-4
V
D
V
V
V
V
V
= V , I = 250µA (Figure 8)
DS
-2
-
V
GS(TH)
GS
DS
DS
GS
D
Zero Gate Voltage Drain Current
I
= Rated BV
, V
= 0V
, T = 150 C
-
1
µA
µA
nA
Ω
DSS
DSS GS
o
= 0.8 x Rated BV
-
-
25
±100
0.300
60
-
DSS
J
Gate to Source Leakage Current
I
= ±20V
-
-
GSS
Drain to Source On Resistance (Note 2)
Turn-On Time
r
I
= 8A, V
= -10V (Figure 7)
-
-
DS(ON)
D
GS
t
V
V
= -25V, I ≈ 4A, R = 9.1Ω, R = 6.25Ω,
-
-
ns
ON
DD
GS
D
G
L
= -10V
Turn-On Delay Time
Rise Time
t
-
16
30
42
20
-
ns
d(ON)
t
-
-
ns
r
Turn-Off Delay Time
Fall Time
t
-
-
ns
d(OFF)
t
-
-
ns
f
Turn-Off Time
t
-
100
80
40
2
ns
OFF
Total Gate Charge
Q
V
V
V
= 0 to -20V
= 0 to -10V
= 0 to -2V
V
= -40V, I = 8A,R = 5Ω,
-
-
nC
nC
nC
C/W
C/W
C/W
g(TOT)
GS
GS
GS
DD
D
L
I
= -0.3mA
G(REF)
Gate Charge at -5V
Q
-
-
g(-10)
Threshold Gate Charge
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Q
-
-
g(TH)
o
o
o
R
-
-
3.125
100
62.5
θJC
θJA
R
TO-251AA, TO-252AA
TO-220AB
-
-
o
Source to Drain Diode Specifications T = 25 C Unless Otherwise Specified
C
PARAMETER
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
NOTE:
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
V
V
I
I
= -8A
-
-
-
-
-1.5
125
SD
SD
t
= -8A, dI /dt = 100A/µs
SD
ns
rr
SD
2. Pulse test: pulse width ≤ 300µs, Duty Cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
4-113