YG862C04各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

产品型号YG862C04R的Datasheet PDF文件预览

YG862C04R (45V / 10A)

[200509]

Outline drawings, mm

Low IR Schottky barrier diode

Features

Low IR

Low VF

Center tap connection

Applications

High frequency operation

DC-DCconverters

AC adapter

Package : TO-220F

Epoxy resin UL : V-0

Connection diagram

1

2

3

Maximum ratings and characteristics

Maximum ratings

Conditions

Rating

45

Symbol

VRSM

VRRM

Viso

Io

Item

Unit

V

Repetitive peak surge reverse voltage

Repetitive peak reverse voltage

Isolating voltage

tw=500ns, duty=1/40

45

V

1500

10

Terminals-to-Case, AC.1min.

V

Square wave, duty=1/2

Tc=129°C

Average output current

A

*

IFSM

PRM

Tj

125

330

+150

Non-repetitive surge current

non-repetitive reverse surge power dissipation

Operating junction temperature

Storage temperature

Sine wave 10ms

tw=10µs, Tj=25°C

A

W

°C

Tstg

-40 to +150

* Out put current of center tap full wave connection

Electrical characteristics (at Ta=25°C Unless otherwise specified )

Item

Max.

0.61

150

3.5

Conditions

IF=5A

Symbol

V^F

Unit

V

Forward voltage **

Reverse current **

Thermal resistance

VR=40V

IR

µA

Junction to case

Rth(j-c)

°C/W

**Rating per element

Mechanical characteristics

Recommended torque

Mounting torque

0.3 to 0.5

2

N·m

g

Approximate mass

http://www.fujielectric.co.jp/fdt/scd/

(45V / 10A )

YG862C04R (10A)

Characteristics

Reverse Characteristic (typ.)

Forward Characteristic (typ.)

10²

10¹

Tj=150°C

Tj=125°C

10

Tj=100°C

10⁰

Tj=150°C

Tj=125°C

Tj=100°C

10^-1

10^-2

10^-3

10^-4

Tj=25°C

Tj= 25°C

1

0.1

0

10

20

30

40

50

60

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

VR Reverse Voltage (V)

VF Forward Voltage (V)

Reverse Power Dissipation (max.)

Forward Power Dissipation (max.)

3

6

DC

Io

360 º

5

4

3

2

1

0

λ

VR

360 º

2

1

0

α

Square wave λ=60°

Square wave λ=120°

Sine wave λ=180°

α=180°

Square wave λ=180°

DC

Per 1element

0

10

20

30

40

50

60

0

1

2

3

4

5

6

VR Reverse Voltage (V)

Io Average Output Current (A)

Junction Capacitance Characteristic (max.)

Current Derating (Io-Tc) (max.)

155

1000

100

10

150

145

140

135

130

125

120

115

110

DC

Square wave λ=180°

Sine wave λ=180°

360 º

Square wave λ=120°

λ

Io

VR=20V

Square wave λ=120°

0

5

10

15

1

10

100

1000

Io Average Output Current (A)

VR Reverse Voltage (V)

λ:Conduction angle of forward current for each rectifier element

Io:Output current of center-tap full wave connection

YG862C04R (10A)

(45V / 10A )

Surge Capability (max.)

1000

100

10

1

10

100

Number of Cycles at 50Hz

Surge Current Ratings (max.)

1000

100

10

1

10

100

1000

tTime (ms) Sinewave

Transient Thermal Impedance (max.)

10¹

Rth(j-c):3.5°C/W

10⁰

10^-1

10^-2

10^-1

10⁰

10¹

10²

t

Time (sec)

http://www.fujielectric.co.jp/fdt/scd/

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型号:	YG862C04R
生命周期：	Obsolete
IHS 制造商：	FUJI ELECTRIC CO LTD
零件包装代码：	TO-220AB
包装说明：	R-PSFM-T3
针数：	3
Reach Compliance Code：	unknown
ECCN代码：	EAR99
HTS代码：	8541.10.00.80
风险等级：	5.56
Is Samacsys：	N
应用：	GENERAL PURPOSE
外壳连接：	ISOLATED
配置：	COMMON CATHODE, 2 ELEMENTS
二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE
JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3
最大非重复峰值正向电流：	125 A
元件数量：	2
相数：	1
端子数量：	3
最高工作温度：	150 °C
最大输出电流：	10 A
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
认证状态：	Not Qualified
最大重复峰值反向电压：	45 V
表面贴装：	NO
技术：	SCHOTTKY
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
Base Number Matches：	1

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