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MT45W4MW16B 参数 Datasheet PDF下载

MT45W4MW16B图片预览
型号: MT45W4MW16B
PDF下载: 下载PDF文件 查看货源
内容描述: 64Mbit的PSRAM使用以及SRAM, VBGA54足迹 [64Mbit psram use as well as sram,VBGA54 footprint]
分类和应用: 静态存储器
文件页数/大小: 61 页 / 970 K
品牌: MICROTUNE [ MICROTUNE,INC ]
 浏览型号MT45W4MW16B的Datasheet PDF文件第43页浏览型号MT45W4MW16B的Datasheet PDF文件第44页浏览型号MT45W4MW16B的Datasheet PDF文件第45页浏览型号MT45W4MW16B的Datasheet PDF文件第46页浏览型号MT45W4MW16B的Datasheet PDF文件第48页浏览型号MT45W4MW16B的Datasheet PDF文件第49页浏览型号MT45W4MW16B的Datasheet PDF文件第50页浏览型号MT45W4MW16B的Datasheet PDF文件第51页  
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Timing Diagrams
Figure 36:
LB#/UB#-Controlled Asynchronous WRITE
tWC
A[21:0]
V
IH
V
IL
tAS
VALID ADDRESS
tAW
tWR
ADV#
V
IH
V
IL
tCW
CE#
V
IH
V
IL
tBW
LB#/UB#
V
IH
V
IL
OE#
V
IH
V
IL
tWPH
V
IH
tWP
WE#
V
IL
tDW
tDH
DQ[15:0]
IN
V
IH
V
IL
tLZ
High-Z
tWHZ
VALID INPUT
DQ[15:0]
OUT
V
OH
V
OL
tCEW
V
IH
V
IL
High-Z
tHZ
High-Z
DON’T CARE
WAIT
Table 28:
Asynchronous WRITE Timing Parameters – LB#/UB#-Controlled
-70x
-856
Min
0
85
85
1
85
0
23
Max
Units
ns
ns
ns
ns
ns
ns
ns
Symbol
t
-70x
Min
10
70
8
46
10
0
55
10
0
Max
8
10
85
-856
Min
Max
8
Units
ns
ns
ns
ns
ns
ns
ns
Symbol
t
Min
0
70
70
1
70
0
23
Max
AS
t
AW
t
BW
t
CEW
t
CW
t
DH
t
DW
HZ
t
LZ
t
WC
t
WHZ
t
7.5
7.5
8
WP
t
WPH
t
WR
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
47
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.