64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Timing Diagrams
Figure 38:
Asynchronous WRITE Using ADV#
A[21:0]
V
IH
V
IL
VALID ADDRESS
tAVS
tVS
tVPH
tAVH
ADV#
V
IH
V
IL
tAS
tVP
tAS
tAW
tCW
V
IH
CE#
V
IL
tBW
V
IH
LB#/UB#
V
IL
V
IH
V
IL
tWP
tWPH
V
IH
V
IL
tDW
tDH
OE#
WE#
DQ[15:0]
V
IH
IN
V
IL
DQ[15:0]
V
OH
OUT
V
OL
tLZ
High-Z
tWHZ
VALID INPUT
tOW
tCEW
WAIT
V
IH
V
IL
High-Z
tHZ
High-Z
DON’T CARE
Table 30:
Asynchronous WRITE Timing Parameters Using ADV#
-70x
-856
Min
0
5
10
85
85
1
85
0
23
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Symbol
t
HZ
t
LZ
t
-70x
Min
10
5
10
10
70
8
46
10
55
10
Max
8
10
5
10
10
85
-856
Min
Max
8
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Symbol
t
AS
t
AVH
t
Min
0
5
10
70
70
1
70
0
23
Max
AVS
t
AW
t
BW
t
CEW
t
CW
t
DH
t
DW
7.5
7.5
OW
t
VP
t
VPH
t
VS
t
WHZ
t
WP
t
WPH
8
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
49
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
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