64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Timing Diagrams
Figure 37:
WE#-Controlled Asynchronous WRITE
tWC
VALID ADDRESS
tAW
V
IH
tWR
V
IH
A[21:0]
V
IL
ADV#
V
IL
tCW
V
IH
CE#
V
IL
tBW
V
IH
LB#/UB#
V
IL
V
IH
OE#
V
IL
tWPH
V
IH
tAS
tWP
WE#
V
IL
tDW
tDH
DQ[15:0]
IN
V
IH
V
IL
tLZ
High-Z
tWHZ
VALID INPUT
tOW
DQ[15:0]
OUT
V
OH
V
OL
tCEW
V
IH
tHZ
High-Z
DON’T CARE
WAIT
V
IL
High-Z
Table 29:
Asynchronous WRITE Timing Parameters – WE#-Controlled
-70x
-856
Min
0
85
85
1
85
0
23
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
Symbol
t
LZ
t
OW
t
WC
t
t
-70x
Min
10
5
70
8
46
10
0
55
10
0
Max
-856
Min
10
5
85
8
Max
Units
ns
ns
ns
ns
ns
ns
ns
Symbol
t
AS
t
AW
t
BW
t
Min
0
70
70
1
70
0
23
Max
CEW
t
CW
t
DH
t
DW
t
HZ
7.5
7.5
WHZ
WP
t
WPH
t
WR
8
8
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
48
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©2003 Micron Technology, Inc. All rights reserved.
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