64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Timing Diagrams
Figure 47:
Asynchronous WRITE Followed by Asynchronous READ
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
tAS
tLZ
tOHZ
A[21:0]
VALID ADDRESS
tAVS
tVPH
tVP
tAVH
VALID ADDRESS
tAW
tVS
tWR
VALID ADDRESS
tAA
tAVS
tVP
tAADV
tBLZ
tCVS
tBHZ
tAVH
ADV#
LB#/UB#
tCVS
tBW
tCW
tCPH
1
tCO
tHZ
CE#
OE#
V
IH
V
IL
V
IH
V
IL
tAS
tWP
tWC
tWPH
tOLZ
WE#
WAIT
V
OH
V
OL
DQ[15:0]
V
IH
IN/OUT
V
IL
tWHZ
High-Z
tOE
DATA
tDH
DATA
tDW
V
OH
V
OL
High-Z
VALID
OUTPUT
DON’T CARE
UNDEFINED
Notes: 1. When configured for synchronous mode (BCR[15] = 0), CE# must remain HIGH for at least
5ns (
t
CPH) to schedule the appropriate internal refresh operation. Otherwise,
t
CPH is only
required after CE#-controlled WRITEs.
Table 45:
WRITE Timing Parameters – Async WRITE Followed by Async READ
-70x
-856
Min
0
5
10
85
85
5
10
85
0
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Symbol
t
-70x
Min
23
10
10
70
70
8
46
10
0
55
10
0
Max
-856
Min
23
10
10
85
85
8
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Symbol
t
Min
0
5
10
70
70
5
10
70
0
Max
AS
t
AVH
t
AVS
t
AW
t
BW
t
CBPH
t
CVS
t
CW
t
DH
DW
t
VP
t
VPH
t
VS
t
WC
t
WHZ
t
WP
t
WPH
t
WR
Table 46:
READ Timing Parameters – Async WRITE Followed by Async READ
-70x
-856
Min
Max
85
85
5
10
8
10
70
10
85
8
Units
ns
ns
ns
ns
ns
ns
�½s
Symbol
t
CVS
t
-70x
Min
10
8
10
20
8
5
10
5
10
10
Max
-856
Min
10
8
20
8
Max
Units
ns
ns
ns
ns
ns
ns
ns
Symbol
t
AA
t
Min
Max
70
70
AADV
t
AVH
t
AVS
t
BHZ
t
BLZ
t
CO
HZ
5
10
t
LZ
t
OE
t
OHZ
t
OLZ
t
VP
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
58
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
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