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MT45W4MW16B 参数 Datasheet PDF下载

MT45W4MW16B图片预览
型号: MT45W4MW16B
PDF下载: 下载PDF文件 查看货源
内容描述: 64Mbit的PSRAM使用以及SRAM, VBGA54足迹 [64Mbit psram use as well as sram,VBGA54 footprint]
分类和应用: 静态存储器
文件页数/大小: 61 页 / 970 K
品牌: MICROTUNE [ MICROTUNE,INC ]
 浏览型号MT45W4MW16B的Datasheet PDF文件第49页浏览型号MT45W4MW16B的Datasheet PDF文件第50页浏览型号MT45W4MW16B的Datasheet PDF文件第51页浏览型号MT45W4MW16B的Datasheet PDF文件第52页浏览型号MT45W4MW16B的Datasheet PDF文件第54页浏览型号MT45W4MW16B的Datasheet PDF文件第55页浏览型号MT45W4MW16B的Datasheet PDF文件第56页浏览型号MT45W4MW16B的Datasheet PDF文件第57页  
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Timing Diagrams
Figure 42:
Asynchronous WRITE Followed by Burst READ
tCLK
V
IH
CLK
V
IL
tWC
tWC
VALID ADDRESS
tCKA
tSP
tHD
V
IH
A[21:0]
V
IL
VALID ADDRESS
VALID
ADDRESS
tAVS
tVPH
tVP
tCVS
tCW
tAVH
tAW
tWR
tSP
tHD
ADV#
V
IH
V
IL
V
IH
LB#/UB#
V
IL
V
IH
CE#
V
IL
tVS
tBW
tCBPH
2
tSP tHD
tCSP
tABA
OE#
V
IL
V
IH
tWC
tAS
tWP
tAS
tOHZ
V
IH
WE#
V
IL
tWPH
tSP tHD
WAIT
V
OH
V
OL
tWHZ
High-Z
DATA
tDH
DATA
tDW
tCEW
tBOE
tACLK
High-Z
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
VALID
OUTPUT
tKOH
High-Z
DQ[15:0]
V
IH
IN/OUT
V
IL
V
OH
V
OL
DON’T CARE
UNDEFINED
Notes: 1. Non-default BCR settings for asynchronous WRITE followed by burst READ: Latency code
two (three clocks); WAIT active LOW; WAIT asserted during delay.
2. When configured for synchronous mode (BCR[15] = 0), a refresh opportunity must be pro-
vided every
t
CEM. A refresh opportunity is satisfied by either of the following two condi-
tions: a) clocked CE# HIGH, or b) CE# HIGH for greater than 15ns. Note that CellularRAM
Working Group 1.0 specification requires CE# to be clocked HIGH to terminate the burst.
3. Clock rates below 50 MHz (
t
CLK > 20ns) are allowed as long as
t
CSP specifications are met.
Table 35:
WRITE Timing Parameters – Async WRITE Followed by Burst READ
-70x
-856
Min
0
5
10
85
85
85
10
85
0
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Symbol
t
DW
t
VP
t
-70x
Min
20
10
10
70
70
8
46
10
0
55
10
0
Max
-856
Min
23
10
10
85
85
8
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Symbol
t
AS
t
AVH
t
Min
0
5
10
70
70
70
10
70
0
Max
AVS
t
AW
t
BW
t
CKA
t
CVS
t
CW
t
DH
VPH
t
VS
t
WC
t
WHZ
t
WP
t
WPH
t
WR
Table 36:
READ Timing Parameters – Async WRITE Followed by Burst READ
-708
-706/-856
Min
Max
56
11
20
5
1
15
7.5
20
Units
ns
ns
ns
ns
ns
ns
Symbol
t
CSP
t
-708
Min
4.5
2
2
3
Max
20
-706/-856
Min
5
2
2
3
Max
20
Units
ns
ns
ns
ns
ns
Symbol
t
ABA
t
Min
Max
46.5
9
20
ACLK
5
1
12.5
HD
t
BOE
t
CBPH
t
CEW
t
CLK
t
KOH
t
OHZ
t
SP
8
8
7.5
20
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
53
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.