64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Timing Diagrams
Figure 44:
CLK
A[21:0]
Burst READ Followed by Asynchronous WRITE (WE#-Controlled)
V
IH
V
IL
V
IH
V
IL
V
IH
t
SP
t
HD
t
CLK
t
WC
VALID
ADDRESS
t
SP
t
HD
VALID
ADDRESS
t
AW
t
WR
ADV#
CE#
V
IL
V
IH
V
IL
V
IH
t
BOE
t
CSP
t
ABA
t
HD
t
HZ
t
CW
t
CBPH
1
t
OHZ
t
AS
OE#
WE#
V
IL
t
SP
t
HD
t
OLZ
t
WP
t
WPH
V
IH
V
IL
V
IH
t
SP
t
HD
t
BW
LB#/UB#
V
IL
t
CEW
t
KHTL
t
CEW
V
OH
t
HZ
WAIT
V
OL
V
OH
V
OL
High-Z
t
ACLK
t
KOH
High-Z
t
DW
t
DH
DQ[15:0]
High-Z
READ Burst Identified
(WE# = HIGH)
VALID
OUTPUT
VALID
INPUT
DON’T CARE
UNDEFINED
Notes: 1. When configured for synchronous mode (BCR[15] = 0), a refresh opportunity must be pro-
vided every
t
CEM. A refresh opportunity is satisfied by either of the following two condi-
tions: a) clocked CE# HIGH, or b) CE# HIGH for greater than 15ns. Note that CellularRAM
Working Group 1.0 specification requires CE# to be clocked HIGH to terminate the burst.
Table 39:
Burst READ Timing Parameters
-708
-706/-856
Min
Max
56
11
20
5
1
15
5
7.5
20
20
Units
ns
ns
ns
ns
ns
ns
ns
Symbol
t
HD
t
HZ
t
t
-708
Min
2
8
9
2
8
3
Max
-706/-856
Min
2
8
11
2
8
3
Max
Units
ns
ns
ns
ns
ns
ns
Symbol
t
ABA
t
ACLK
t
t
Min
Max
46.5
9
20
BOE
CBPH
t
CEW
t
CLK
t
CSP
5
1
12.5
4.5
7.5
20
20
KHTL
KOH
t
OHZ
t
SP
Table 40:
Asynchronous WRITE Timing Parameters – WE#-Controlled
-70x
-856
Min
85
85
85
0
23
Max
0
Units
ns
ns
ns
ns
ns
ns
Symbol
t
-70x
Min
70
46
10
0
Max
8
85
55
10
0
-856
Min
Max
8
Units
ns
ns
ns
ns
ns
Symbol
t
Min
0
70
70
70
0
23
Max
AS
t
AW
t
BW
t
CW
t
DH
t
DW
HZ
t
WC
t
WP
t
WPH
t
WR
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
55
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
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