64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Timing Diagrams
Figure 45:
CLK
A[21:0]
Burst READ Followed by Asynchronous WRITE Using ADV#
V
IH
V
IL
V
IH
V
IL
V
IH
t
SP
t
HD
t
CLK
VALID
ADDRESS
t
SP
t
HD
t
VPH
VALID
ADDRESS
t
AVS
t
VP
t
AW
t
HZ
t
CBPH
1
t
BOE
t
OHZ
t
AS
t
CW
t
AVH
t
VS
ADV#
V
IL
V
IH
V
IL
V
IH
t
CSP
t
ABA
t
HD
CE#
OE#
V
IL
V
IH
V
IL
V
IH
t
SP
t
HD
t
SP
t
HD
t
OLZ
t
AS
t
WP
t
WPH
WE#
t
BW
LB#/UB#
V
IL
t
CEW
t
KHTL
t
CEW
V
OH
t
HZ
WAIT
V
OL
V
OH
V
OL
High-Z
t
ACLK
t
KOH
High-Z
t
DW
t
DH
DQ[15:0]
High-Z
READ Burst Identified
(WE# = HIGH)
VALID
OUTPUT
VALID
INPUT
DON’T CARE
UNDEFINED
Notes: 1. When configured for synchronous mode (BCR[15] = 0), a refresh opportunity must be pro-
vided every
t
CEM. A refresh opportunity is satisfied by either of the following two condi-
tions: a) clocked CE# HIGH, or b) CE# HIGH for greater than 15ns. Note that CellularRAM
Working Group 1.0 specification requires CE# to be clocked HIGH to terminate the burst.
Table 41:
Burst READ Timing Parameters
-708
-706/-856
Min
Max
56
11
20
5
1
15
5
7.5
20
20
Units
ns
ns
ns
ns
ns
ns
ns
Symbol
t
-708
Min
2
8
9
2
8
3
Max
-706/-856
Min
2
8
11
2
8
3
Max
Units
ns
ns
ns
ns
ns
ns
Symbol
t
Min
Max
46.5
9
20
ABA
t
ACLK
t
BOE
t
CBPH
t
CEW
t
CLK
t
CSP
HD
t
HZ
t
KHTL
t
KOH
t
OHZ
t
SP
5
1
12.5
4.5
7.5
20
20
Table 42:
Asynchronous WRITE Timing Parameters Using ADV#
-70x
-856
Min
0
5
10
85
85
1
85
0
Max
Units
ns
ns
ns
ns
ns
ns
ns
ns
Symbol
t
DW
t
-70x
Min
23
8
10
10
70
46
10
10
10
85
55
10
Max
-856
Min
23
8
Max
Units
ns
ns
ns
ns
ns
ns
ns
Symbol
t
AS
t
Min
0
5
10
70
70
1
70
0
Max
AVH
t
AVS
t
AW
t
BW
t
CEW
t
CW
t
DH
7.5
7.5
HZ
t
VP
t
VPH
t
VS
t
WP
t
WPH
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
56
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.
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