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MT45W4MW16B 参数 Datasheet PDF下载

MT45W4MW16B图片预览
型号: MT45W4MW16B
PDF下载: 下载PDF文件 查看货源
内容描述: 64Mbit的PSRAM使用以及SRAM, VBGA54足迹 [64Mbit psram use as well as sram,VBGA54 footprint]
分类和应用: 静态存储器
文件页数/大小: 61 页 / 970 K
品牌: MICROTUNE [ MICROTUNE,INC ]
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64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
Timing Diagrams
Figure 48:
54-Ball VFBGA
0.70 ±0.05
SEATING
PLANE
C
0.10
C
3.75
0.75
TYP
BALL A1 ID
SOLDER
BALL MATERIAL:
62% Sn,
36% Pb, 2% Ag or
96.5%
Sn,
3% Ag, 0.5%
Cu
SOLDER
BALL PAD: Ø0.30
SOLDER
MASK DEFINED
SUBSTRATE
MATERIAL: PLASTIC LAMINATE
MOLD
COMPOUND:
EPOXY NOVOLAC
BALL A1 ID
54X Ø0.37
SOLDER
BALL DIAMETER
REFERS TO POST REFLOW
CONDITION.
THE PRE-REFLOW
DIAMETER IS Ø0.35.
BALL A6
4.00 ±0.05
BALL A1
8.00 ±0.10
6.00
3.00
0.75 TYP
1.875
3.00 ±0.05
1.00 MAX
6.00
±0.10
Notes: 1. All dimensions in millimeters; MAX/MIN, or typical, as noted.
2. Package width and length do not include mold protrusion; allowable mold protrusion is
0.25mm per side.
®
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc. CellularRAM is a trademark of Micron
Technology, Inc., inside the U.S. and a trademark of Infineon Technologies outside the U.S.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the complete power supply and temperature range
for production devices. Although considered final, these specifications are subject to change, as further product
development and data characterization sometimes occur.
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
59
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc. All rights reserved.