MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
0.2+/-0.05
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
DESCRIPTION
RD07MUS2B is a MOS FET type transistor
specifically designed for VHF/UHF RF power
amplifiers applications.
OUTLINE DRAWING
6.0+/-0.15
(0.22)
4.6+/-0.05
3.3+/-0.05
0.8+/-0.05
FEATURES
High power gain and High Efficiency.
Gp>13.2dB 58%min. (175MHz)
Gp> 12.4dB 58%min. (527MHz)
Gp> 11.5dB 58%Typ. (870MHz)
Integrated gate protection diode.
4.9+/-0.15
1.0+/-0.05
1
2
3.5+/-0.05
(0.22)
2.0+/-0.05
(0.25)
3
(0.25)
APPLICATION
For output stage of high power amplifiers in
VHF/UHF-band mobile radio sets.
The recommended frequency is 135-527MHz.
INDEX MARK
(Gate)
0.2+/-0.05
0.9+/-0.1
Terminal No.
1.Drain (output)
2.Source (GND)
3.Gate (input)
Note
( ):center value
RoHS COMPLIANT
RD07MUS2B is a RoHS compliant product.
RoHS compliance is indicating by the letter “G” after the Lot
Marking. This product includes the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1. Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
ABSOLUTE MAXIMUM RATINGS
(Tc=25
°C
UNLESS OTHERWISE NOTED)
SYMBOL
VDSS
VGSS
Pch
Pin
ID
Tch
Tstg
Rth j-c
PARAMETER
Drain to source voltage
Gate to source voltage
Channel dissipation
Input Power
Drain Current
Junction Temperature
Storage temperature
Thermal resistance
CONDITIONS
Vgs=0V
Vds=0V
Tc=25
°C
Zg=Zl=50
Ω
-
-
-
Junction to case
RATINGS
25
-5/+10
50
0.8*
3
150
-40 to +125
2.5
UNIT
V
V
W
W
A
°C
°C
°C/W
Note: Above parameters are guaranteed independently.
*: 175MHz spec. is 0.6W
ELECTRICAL CHARACTERISTICS
(Tc=25
°C
, UNLESS OTHERWISE NOTED)
SYMBOL
I
DSS
I
GSS
V
TH
Pout1
ηD1
Pout2
ηD2
PARAMETER
Drain cutoff current
Gate cutoff current
Gate threshold Voltage
Output power
Drain efficiency
Output power
Drain efficiency
CONDITIONS
V
DS
=17V, V
GS
=0V
V
GS
=5V, V
DS
=0V
V
DS
=7.2V, I
DS
=1mA
f=175MHz,V
DD
=7.2V
Pin=0.3W,Idq=250mA
f=527MHz ,V
DD
=7.2V
Pin=0.4W,Idq=250mA
V
DD
=9.5V,Po=6.3W(Pin Control)
f=175MHz,Idq=250mA,Zg=50
Ω
Load VSWR=20:1(All Phase)
V
DD
=9.5V,Po=7W(Pin Control)
f=527MHz,Idq=250mA,Zg=50
Ω
Load VSWR=20:1(All Phase)
MIN
-
-
-
6.3**
58**
7***
58***
LIMITS
TYP
MAX.
-
10
-
1
1
-
7.2**
-
65**
-
8***
-
63***
-
No destroy
UNIT
uA
uA
V
W
%
W
%
-
VSWRT1 Load VSWR tolerance1
VSWRT2 Load VSWR tolerance2
No destroy
-
Note: Above parameters, ratings, limits and conditions are subject to change.
** At 135-175MHz broad matching
*** At 450-527MHz broad matching
RD07MUS2B
MITSUBISHI ELECTRIC
1/14
9 Sep 2009
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
