MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
f-Po CHARACTERISTICS @f=135-175MHz
100
f-Po CHARACTERISTICS @f=135-175MHz
50
40
30
20
10
0
10
8
100
80
60
40
20
0
Po
Po
80
60
40
20
0
Ta=+25°C
Vdd=7.2V
Pin=0.3W
Idq=250mA
6
ηd
ηd
Ta=+25°C
Vdd=7.2V
Pin=0.3W
Idq=250mA
4
Gp
Idd
2
Idd
0
135 140 145 150 155 160 165 170 175
f (MHz)
135 140 145 150 155 160 165 170 175
f (MHz)
f-Po CHARACTERISTICS @f=450-527MHz
f-Po CHARACTERISTICS @f=450-527MHz
50
100
80
60
40
20
0
10
8
100
Po
Po
40
30
20
10
0
80
60
40
20
0
6
Ta=+25°C
Vdd=7.2V
Pin=0.4W
Idq=250mA
ηd
ηd
Ta=+25°C
Vdd=7.2V
Pin=0.4W
Idq=250mA
4
Gp
Idd
2
Idd
0
450 460 470 480 490 500 510 520 530
f (MHz)
450 460 470 480 490 500 510 520 530
f (MHz)
f-Po CHARACTERISTICS @f=763-870MHz
f-Po CHARACTERISTICS @f=763-870MHz
50
40
30
20
10
0
100
80
60
40
20
0
10
100
80
60
40
20
0
Ta=+25°C
Vdd=7.2V
Pin=0.5W
Idq=250mA
Po
Po
8
6
4
2
0
Ta=+25°C
ηd
η
ｄ
Vdd=7.2V
Pin=0.5W
Idq=250mA
Gp
Idd
Idd
760 780 800 820 840 860 880 900 920 940 960
f (MHz)
760 780 800 820 840 860 880 900 920 940 960
f (MHz)
RD07MUS2B
9 Sep 2009
MITSUBISHI ELECTRIC
3/14
MITSUBISHI [ Mitsubishi Group ]
