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    • 北京元坤伟业科技有限公司

       该会员已使用本站17年以上
    • NDS9407_Q
    • 数量5000 
    • 厂家Fairchild Semiconductor 
    • 封装贴/插片 
    • 批号16+ 
    • 百分百原装正品，现货库存
    • QQ:857273081QQ：857273081 复制
      QQ:1594462451QQ：1594462451 复制
    • 010-62106431 QQ:857273081QQ:1594462451

    产品型号NDS9410的Datasheet PDF文件预览

    April 2000  
    NDS9410A  
    Single N-Channel Enhancement Mode Field Effect Transistor  
    General Description  
    Features  
    This N-Channel Logic Level MOSFET is produced  
    • 7.3 A, 30 V.  
    RDS(ON) = 28 mΩ @ VGS = 10 V  
    RDS(ON) = 42 mΩ @ VGS = 4.5 V  
    using  
    Fairchild  
    Semiconductor’s  
    advanced  
    PowerTrench process that has been especially tailored  
    to minimize the on-state resistance and yet maintain  
    superior switching performance.  
    • High performance trench technology for extremely  
    low RDS(ON)  
    These devices are particularly suited for low voltage  
    applications such as notebook computer power  
    management and other battery powered circuits where  
    fast switching, low in-line power loss and resistance to  
    transients are needed.  
    • High power and current handling capability in a  
    widely used surface mount package.  
    D
    D
    D
    5
    6
    7
    8
    4
    3
    2
    1
    D
    G
    S
    S
    SO-8  
    S
    Absolute Maximum Ratings TA=25oC unless otherwise noted  
    Symbol  
    VDSS  
    Parameter  
    Drain-Source Voltage  
    Ratings  
    Units  
    30  
    V
    V
    A
    VGSS  
    Gate-Source Voltage  
    ±20  
    7.3  
    ID  
    Drain Current – Continuous  
    – Pulsed  
    (Note 1a)  
    20  
    Power Dissipation for Single Operation  
    (Note 1a)  
    (Note 1b)  
    (Note 1c)  
    2.5  
    PD  
    W
    1.2  
    1.0  
    TJ, TSTG  
    Operating and Storage Junction Temperature Range  
    -55 to +150  
    °C  
    Thermal Characteristics  
    Thermal Resistance, Junction-to-Ambient  
    Thermal Resistance, Junction-to-Case  
    (Note 1a)  
    (Note 1)  
    50  
    25  
    RθJA  
    °C/W  
    °C/W  
    RθJC  
    Package Marking and Ordering Information  
    Device Marking  
    Device  
    Reel Size  
    Tape width  
    Quantity  
    NDS9410A  
    NDS9410A  
    13’’  
    12mm  
    2500 units  
    NDS9410A Rev B(W)  
    2000 Fairchild Semiconductor Corporation  
    Electrical Characteristics  
    TA = 25°C unless otherwise noted  
    Symbol  
    Parameter  
    Test Conditions  
    Min Typ Max Units  
    Off Characteristics  
    BVDSS  
    Drain–Source Breakdown Voltage  
    30  
    V
    V
    GS = 0 V, ID = 250 µA  
    ∆BVDSS  
    ∆TJ  
    Breakdown Voltage Temperature  
    Coefficient  
    28  
    ID = 250 µA, Referenced to 25°C  
    mV/°C  
    IDSS  
    Zero Gate Voltage Drain Current  
    Gate–Body Leakage, Forward  
    Gate–Body Leakage, Reverse  
    VDS = 24 V, VGS = 0 V  
    VGS = 20 V, VDS = 0 V  
    VGS = –20 V VDS = 0 V  
    2
    µA  
    nA  
    nA  
    IGSSF  
    IGSSR  
    100  
    –100  
    On Characteristics  
    (Note 2)  
    VGS(th)  
    Gate Threshold Voltage  
    1
    1.6  
    3
    V
    V
    DS = VGS, ID = 250 µA  
    ∆VGS(th)  
    ∆TJ  
    RDS(on)  
    Gate Threshold Voltage  
    Temperature Coefficient  
    Static Drain–Source  
    On–Resistance  
    ID = 250 µA, Referenced to 25°C  
    -4.3  
    mV/°C  
    mΩ  
    VGS = 10 V, ID = 7.3 A  
    VGS = 10 V, ID = 7.3 A, TJ=125°C  
    VGS = 4.5 V, ID = 6.3 A  
    VGS = 4.5 V, ID = 6.3 A, TJ=125°C  
    VGS = 10 V, VDS = 5 V  
    19  
    30  
    25  
    42  
    28  
    45  
    42  
    75  
    ID(on)  
    gFS  
    On–State Drain Current  
    20  
    A
    S
    Forward Transconductance  
    VDS = 15 V,  
    ID = 7.3 A  
    22  
    Dynamic Characteristics  
    Ciss  
    Coss  
    Crss  
    Input Capacitance  
    830  
    185  
    80  
    pF  
    pF  
    pF  
    VDS = 15 V, V GS = 0 V,  
    f = 1.0 MHz  
    Output Capacitance  
    Reverse Transfer Capacitance  
    Switching Characteristics (Note 2)  
    V
    DD = 25 V, ID = 1 A,  
    td(on)  
    tr  
    td(off)  
    tf  
    Turn–On Delay Time  
    Turn–On Rise Time  
    Turn–Off Delay Time  
    Turn–Off Fall Time  
    Total Gate Charge  
    Gate–Source Charge  
    Gate–Drain Charge  
    6
    12  
    20  
    32  
    10  
    22  
    ns  
    ns  
    VGS = 10 V, RGEN = 6 Ω  
    10  
    18  
    5
    ns  
    ns  
    V
    DS = 15 V, ID = 2 A,  
    Qg  
    Qgs  
    Qgd  
    14  
    2.7  
    3.0  
    nC  
    nC  
    nC  
    VGS = 10 V  
    Drain–Source Diode Characteristics and Maximum Ratings  
    IS  
    Maximum Continuous Drain–Source Diode Forward Current  
    2.2  
    1.1  
    A
    V
    Drain–Source Diode Forward  
    VSD  
    V
    GS = 0 V, IS = 2.2 A  
    (Note 2)  
    0.78  
    Voltage  
    Notes:  
    1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of  
    the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.  
    a) 50°/W when  
    b) 105°/W when  
    c) 125°/W when mounted on a  
    minimum pad.  
    mounted on a 1in2  
    pad of 2 oz copper  
    mounted on a .04 in2  
    pad of 2 oz copper  
    Scale 1 : 1 on letter size paper  
    2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%  
    NDS9410A Rev B(W)  
    Typical Characteristics  
    30  
    2.5  
    2
    4.0V  
    VGS = 10V  
    25  
    VGS = 3.0V  
    3.5V  
    6.0V  
    20  
    15  
    10  
    5
    5.0V  
    4.5V  
    3.5V  
    3.0V  
    1.5  
    1
    4.0V  
    4.5V  
    5.0V  
    6.0V  
    10V  
    20  
    2.5V  
    0
    0.5  
    0
    0.5  
    1
    1.5  
    2
    2.5  
    0
    5
    10  
    15  
    25  
    30  
    VDS, DRAIN-SOURCE VOLTAGE (V)  
    ID, DRAIN CURRENT (A)  
    Figure 1. On-Region Characteristics.  
    Figure 2. On-Resistance Variation with  
    Drain Current and Gate Voltage.  
    0.1  
    0.08  
    0.06  
    0.04  
    0.02  
    0
    1.8  
    1.6  
    1.4  
    1.2  
    1
    ID = 7.3 A  
    ID = 7.3A  
    VGS = 10V  
    TA = 125oC  
    0.8  
    0.6  
    0.4  
    TA = 25oC  
    -50  
    -25  
    0
    25  
    50  
    75  
    100  
    125  
    150  
    2
    4
    6
    8
    10  
    TJ, JUNCTION TEMPERATURE (oC)  
    VGS, GATE TO SOURCE VOLTAGE (V)  
    Figure 3. On-Resistance Variation with  
    Temperature.  
    Figure 4. On-Resistance Variation with  
    Gate-to-Source Voltage.  
    100  
    30  
    25  
    20  
    15  
    10  
    5
    TA = -55oC  
    VGS = 0V  
    25oC  
    VDS = 5V  
    10  
    TA = 125oC  
    125oC  
    1
    25o  
    0.1  
    -55oC  
    0.01  
    0.001  
    0.0001  
    0
    0
    0.2  
    0.4  
    0.6  
    0.8  
    1
    1.2  
    1.4  
    0.5  
    1.5  
    2.5  
    3.5  
    4.5  
    VSD, BODY DIODE FORWARD VOLTAGE (V)  
    VGS, GATE TO SOURCE VOLTAGE (V)  
    Figure 5. Transfer Characteristics.  
    Figure 6. Body Diode Forward Voltage Variation  
    with Source Current and Temperature.  
    NDS9410A Rev B(W)  
    Typical Characteristics  
    10  
    1500  
    1200  
    900  
    600  
    300  
    0
    f = 1MHz  
    GS = 0 V  
    ID = 7.3A  
    VDS = 5V  
    V
    10V  
    8
    6
    4
    2
    0
    15V  
    CISS  
    COSS  
    CRSS  
    0
    3
    6
    9
    12  
    15  
    0
    5
    10  
    15  
    20  
    25  
    30  
    Qg, GATE CHARGE (nC)  
    VDS, DRAIN TO SOURCE VOLTAGE (V)  
    Figure 7. Gate Charge Characteristics.  
    Figure 8. Capacitance Characteristics.  
    100  
    50  
    40  
    30  
    20  
    10  
    0
    RDS(ON) LIMIT  
    µ
    100  
    SINGLE PULSE  
    RθJA = 125oC/W  
    TA = 25oC  
    s
    1ms  
    10ms  
    100ms  
    1s  
    10s  
    DC  
    10  
    1
    0.1  
    VGS = 10V  
    SINGLE PULSE  
    RθJA = 125oC/W  
    TA = 25oC  
    0.01  
    0.001  
    0.1  
    1
    10  
    100  
    0.001  
    0.01  
    0.1  
    1
    10  
    100  
    VDS, DRAIN-SOURCE VOLTAGE (V)  
    t1, TIME (SEC)  
    Figure 9. Maximum Safe Operating Area.  
    Figure 10. Single Pulse Maximum  
    Power Dissipation.  
    1
    D = 0.5  
    RθJA(t) = r(t) + Rθ  
    JA  
    0.2  
    RθJA = 125 °C/W  
    0.1  
    0.05  
    0.02  
    0.01  
    0.1  
    0.01  
    P(pk)  
    t1  
    t2  
    SINGLE PULSE  
    TJ - TA = P * RθJA(t)  
    Duty Cycle, D = t1 / t2  
    0.001  
    0.0001  
    0.001  
    0.01  
    0.1  
    1
    10  
    100  
    1000  
    t1, TIME (sec)  
    Figure 11. Transient Thermal Response Curve.  
    Thermal characterization performed using the conditions described in Note 1c.  
    Transient thermal response will change depending on the circuit board design.  
    NDS9410A Rev B(W)  
    SO-8 Tape and Reel Data and Package Dimensions  
    SOIC(8lds) Packaging  
    Configuration: Figure 1.0  
    Packaging Description:  
    SOIC-8 parts are shipped in tape. The carrier tape is  
    ELECTROSTATIC  
    SENSITIVE DEVICES  
    DO NO  
    T
    S
    M
    HI  
    P
    OR  
    S
    TO  
    RE  
    N
    E
    AR  
    S
    T
    RO NG  
    E
    L
    E
    CTROS  
    T
    ATIC  
    made from dissipative (carbon filled) polycarbonate  
    a
    E
    L
    E
    CTRO  
    AGN  
    E
    TI  
    C,  
    M
    AG NE  
    T
    IC  
    O
    R R ADIO ACTIVE FI ELD S  
    TNR DATE  
    PT NUMB E  
    resin. The cover tape is a multilayer film (Heat Activated  
    Adhesive in nature) primarily composed of polyester film,  
    adhesive layer, sealant, and anti-static sprayed agent.  
    These reeled parts in standard option are shipped with  
    2,500 units per 13" or 330cm diameter reel. The reels are  
    dark blue in color and is made of polystyrene plastic (anti-  
    static coated). Other option comes in 500 units per 7" or  
    177cm diameter reel. This and some other options are  
    further described in the Packaging Information table.  
    R
    PEEL STRENGTH MIN ______________gms  
    MAX _____________gms  
    Antistatic Cover Tape  
    ESD Label  
    These full reels are individually barcode labeled and  
    placed inside  
    a standard intermediate box (illustrated in  
    figure 1.0) made of recyclable corrugated brown paper.  
    One box contains two reels maximum. And these boxes  
    are placed inside  
    comes in different sizes depending on the number of parts  
    shipped.  
    a barcode labeled shipping box which  
    Static Dissipative  
    Embossed Carrier Tape  
    F63TNR  
    Label  
    F
    NDS  
    9959  
    852  
    Customized  
    Label  
    F
    F
    F
    F
    Pin 1  
    SOIC (8lds) Packaging Information  
    Standard  
    L86Z  
    F011  
    D84Z  
    Packaging Option  
    (no flow code)  
    SOIC-8 Unit Orientation  
    Packaging type  
    TNR  
    2,500  
    Rail/Tube  
    TNR  
    4,000  
    TNR  
    500  
    Qty per Reel/Tube/Bag  
    Reel Size  
    95  
    -
    13" Dia  
    13" Dia  
    7" Dia  
    Box Dimension (mm)  
    Max qty per Box  
    343x64x343 530x130x83 343x64x343 184x187x47  
    5,000  
    0.0774  
    0.6060  
    30,000  
    0.0774  
    -
    8,000  
    0.0774  
    0.9696  
    1,000  
    0.0774  
    0.1182  
    Weight per unit (gm)  
    Weight per Reel (kg)  
    Note/Comments  
    343mm x 342mm x 64mm  
    Standard Intermediate box  
    ESD Label  
    F63TNR Label sample  
    F63TNLabel  
    ESD Label  
    F63TN Label  
    LOT: CBVK741B019  
    FSID: FDS9953A  
    QTY: 2500  
    SPEC:  
    D/C1: D9842  
    D/C2:  
    QTY1:  
    QTY2:  
    SPEC REV:  
    CPN:  
    N/F: F  
    (F63TNR)3  
    SOIC(8lds) Tape Leader and Trailer  
    Configuration: Figure 2.0  
    Carrier Tape  
    Cover Tape  
    Components  
    Trailer Tape  
    Leader Tape  
    640mm minimum or  
    80 empty pockets  
    1680mm minimum or  
    210 empty pockets  
    July 1999, Rev. B  
    SO-8 Tape and Reel Data and Package Dimensions, continued  
    SOIC(8lds) Embossed Carrier Tape  
    Configuration: Figure 3.0  
    P0  
    D0  
    T
    E1  
    E2  
    F
    W
    K0  
    Wc  
    B0  
    Tc  
    A0  
    D1  
    P1  
    User Direction of Feed  
    Dimensions are in millimeter  
    A0  
    B0  
    W
    D0  
    D1  
    E1  
    E2  
    F
    P1  
    P0  
    K0  
    T
    Wc  
    Tc  
    Pkg type  
    0.450  
    +/-  
    0.150  
    (8lds)  
    SOIC  
    (12mm)  
    6.50  
    +/-0.10  
    5.30  
    +/-0.10  
    12.0  
    +/-0.3  
    1.55  
    +/-0.05  
    1.60  
    +/-0.10  
    1.75  
    +/-0.10  
    10.25  
    min  
    5.50  
    +/-0.05  
    8.0  
    +/-0.1  
    4.0  
    +/-0.1  
    2.1  
    +/-0.10  
    9.2  
    +/-0.3  
    0.06  
    +/-0.02  
    Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481  
    rotational and lateral movement requirements (see sketches A, B, and C).  
    0.5mm  
    maximum  
    20 deg maximum  
    Typical  
    component  
    cavity  
    center line  
    0.5mm  
    maximum  
    B0  
    20 deg maximum component rotation  
    Typical  
    component  
    center line  
    Sketch A (Side or Front Sectional View)  
    Component Rotation  
    Sketch C (Top View)  
    Component lateral movement  
    A0  
    Sketch B (Top View)  
    Component Rotation  
    SOIC(8lds) Reel Configuration: Figure 4.0  
    W1 Measured at Hub  
    Dim A  
    Max  
    Dim A  
    max  
    See detail AA  
    Dim N  
    7"Diameter Option  
    B Min  
    Dim C  
    See detail AA  
    Dim D  
    min  
    W3  
    13" Diameter Option  
    W2 max Measured at Hub  
    DETAIL AA  
    Dim W2  
    Dimensions are in inches and millimeters  
    Reel  
    Option  
    Tape Size  
    12mm  
    Dim A  
    Dim B  
    Dim C  
    Dim D  
    Dim N  
    Dim W1  
    Dim W3 (LSL-USL)  
    7.00  
    177.8  
    0.059  
    1.5  
    512 +0.020/-0.008  
    13 +0.5/-0.2  
    0.795  
    20.2  
    2.165  
    55  
    0.488 +0.078/-0.000  
    12.4 +2/0  
    0.724  
    18.4  
    0.469 – 0.606  
    11.9 – 15.4  
    7" Dia  
    13.00  
    330  
    0.059  
    1.5  
    512 +0.020/-0.008  
    13 +0.5/-0.2  
    0.795  
    20.2  
    7.00  
    178  
    0.488 +0.078/-0.000  
    12.4 +2/0  
    0.724  
    18.4  
    0.469 – 0.606  
    11.9 – 15.4  
    12mm  
    13" Dia  
    July 1999, Rev. B  
    SO-8 Tape and Reel Data and Package Dimensions, continued  
    SOIC-8 (FS PKG Code S1)  
    1 : 1  
    Scale 1:1 on letter size paper  
    Dimensions shown below are in:  
    inches [millimeters]  
    Part Weight per unit (gram): 0.0774  
    9
    September 1998, Rev. A  
    TRADEMARKS  
    The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is  
    not intended to be an exhaustive list of all such trademarks.  
    ACEx™  
    HiSeC™  
    SuperSOT™-8  
    SyncFET™  
    TinyLogic™  
    UHC™  
    Bottomless™  
    CoolFET™  
    CROSSVOLT™  
    E2CMOSTM  
    FACT™  
    ISOPLANAR™  
    MICROWIRE™  
    POP™  
    PowerTrench  
    QFET™  
    VCX™  
    QS™  
    FACT Quiet Series™  
    FAST  
    FASTr™  
    Quiet Series™  
    SuperSOT™-3  
    SuperSOT™-6  
    GTO™  
    DISCLAIMER  
    FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER  
    NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD  
    DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT  
    OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT  
    RIGHTS, NOR THE RIGHTS OF OTHERS.  
    LIFE SUPPORT POLICY  
    FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
    DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.  
    As used herein:  
    1. Life support devices or systems are devices or  
    systems which, (a) are intended for surgical implant into  
    the body, or (b) support or sustain life, or (c) whose  
    failure to perform when properly used in accordance  
    with instructions for use provided in the labeling, can be  
    reasonably expected to result in significant injury to the  
    user.  
    2. A critical component is any component of a life  
    support device or system whose failure to perform can  
    be reasonably expected to cause the failure of the life  
    support device or system, or to affect its safety or  
    effectiveness.  
    PRODUCT STATUS DEFINITIONS  
    Definition of Terms  
    Datasheet Identification  
    Product Status  
    Definition  
    Advance Information  
    Formative or  
    In Design  
    This datasheet contains the design specifications for  
    product development. Specifications may change in  
    any manner without notice.  
    Preliminary  
    First Production  
    This datasheet contains preliminary data, and  
    supplementary data will be published at a later date.  
    Fairchild Semiconductor reserves the right to make  
    changes at any time without notice in order to improve  
    design.  
    No Identification Needed  
    Obsolete  
    Full Production  
    This datasheet contains final specifications. Fairchild  
    Semiconductor reserves the right to make changes at  
    any time without notice in order to improve design.  
    Not In Production  
    This datasheet contains specifications on a product  
    that has been discontinued by Fairchild semiconductor.  
    The datasheet is printed for reference information only.  
    Rev. E  
    配单直通车
    NDS9410产品参数
    型号:NDS9410
    是否无铅： 含铅
    是否Rohs认证： 不符合
    生命周期：Obsolete
    IHS 制造商：NATIONAL SEMICONDUCTOR CORP
    包装说明：SMALL OUTLINE, R-PDSO-G8
    Reach Compliance Code：unknown
    ECCN代码：EAR99
    HTS代码：8541.29.00.95
    风险等级：5.21
    Is Samacsys：N
    配置：SINGLE WITH BUILT-IN DIODE
    最小漏源击穿电压：30 V
    最大漏极电流 (Abs) (ID)：7 A
    最大漏极电流 (ID)：7 A
    最大漏源导通电阻：0.03 Ω
    FET 技术：METAL-OXIDE SEMICONDUCTOR
    JESD-30 代码：R-PDSO-G8
    JESD-609代码：e0
    元件数量：1
    端子数量：8
    工作模式：ENHANCEMENT MODE
    最高工作温度：150 °C
    封装主体材料：PLASTIC/EPOXY
    封装形状：RECTANGULAR
    封装形式：SMALL OUTLINE
    峰值回流温度（摄氏度）：NOT SPECIFIED
    极性/信道类型：N-CHANNEL
    最大功率耗散 (Abs)：2.5 W
    最大脉冲漏极电流 (IDM)：20 A
    认证状态：Not Qualified
    子类别：FET General Purpose Power
    表面贴装：YES
    端子面层：Tin/Lead (Sn/Pb)
    端子形式：GULL WING
    端子位置：DUAL
    处于峰值回流温度下的最长时间：NOT SPECIFIED
    晶体管应用：SWITCHING
    晶体管元件材料：SILICON
    最大关闭时间（toff）：290 ns
    最大开启时间（吨）：90 ns
    Base Number Matches：1
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