PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
PROVISIONAL DATASHEET ISSUE 2 SEPTEMBER 94
ZTX788A
FEATURES
*
*
*
15 Volt VCEO
Gain of 200 at IC=2 Amps
Very low saturation voltage
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-20
-15
-5
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Peak Pulse Current
-10
-3
A
Continuous Collector Current
Practical Power Dissipation*
IC
A
Ptotp
Ptot
1.5
W
Power Dissipation at Tamb=25°C
derate above 25°C
1
5.7
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
-20
-15
-5
-30
-20
-8.5
V
V
V
IC=-100µA
IC=-10mA*
IE=-100µA
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
-0.1
-10
VCB=-10V
µA
µA
VCB=-10V, Tamb=100°C
Emitter Cut-Off Current
IEBO
-0.1
VEB=-4V
µA
Collector-Emitter Saturation
Voltage
VCE(sat)
-0.025 -0.035
-0.25 -0.32
-0.28 -0.33
V
V
V
IC=-0.1A, IB=-2mA*
IC=-2A, IB=-20mA*
IC=-3A, IB=-200mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
-0.85 -1.0
V
IC=-2A, IB=-20mA*
Base-Emitter
Turn-On Voltage
-0.8
V
IC=-2A, VCE=-3V*
Static Forward Current
Transfer Ratio
300
250
200
80
800
IC=-10mA, VCE=-1V*
IC=-1A, VCE=-1V*
IC=-2A, VCE=-1V*
IC=-10A, VCE=-2V*
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